| PART |
Description |
Maker |
| RA07M1317MSA-101 |
135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA08H1317M_06 RA08H1317M RA08H1317M-101 RA08H1317M |
RoHS Compliance , 135-175MHz 8W 12.5V, 2 stage Amp. For PORTABLE RADIO
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M57732L 57732L |
135-160 MHz, 12.5V, 7W, FM PORTABLE RADIO
135-160MHz 12.5V,7W,FM PORTABLE RADIO
From old datasheet system
135-160MHZ, 12.5V,7W, FM POPHTABLE RADIO
135-160MHz 12.5V /7W /FM PORTABLE RADIO
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| RA60H1317M10 |
135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA30H1317M_06 RA30H1317M RA30H1317M-101 RA30H1317M |
RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RA60H1317M_06 RA60H1317M RA60H1317M-101 RA60H1317M |
RoHS Compliance ,135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M67748LR |
RF POWER MODULE 135-150MHz, 12.5V, 7W, FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
|
| RA08N1317M RA08N1317M-01 RA08N1317M-E01 |
Anti-Static Storage Bags; External Height:6"; External Width:4"; Features:Zipper closure, amine-free, noncorrosive; Material:Vapor-Coated Alum. Shield Bonded between Polyester Outer & Polyethylene Inner Layers RoHS Compliant: NA
Anti-Static Storage Bags; External Height:10"; External Width:6"; Features:Zipper closure, Amine-free, noncorrosive; Material:Vapor-Coated Alum. Shield Bonded between Polyester Outer & Polyethylene Inner Layers RoHS Compliant: NA
135-175MHz 8W 9.6V PORTABLE RADIO
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| D1004 D1004UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(80W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应80W-28V-175MHz,单端))
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D1005 D1005UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(80W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应80W-28V-175MHz,单端))
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
Semelab PLC
SEME-LAB[Seme LAB]
|
| D1002UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(40W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应40W-28V-175MHz,单端))
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
