| PART |
Description |
Maker |
| UPA502T PA502T G11238EJ1V0DS00 UPA502T-T1 UPA502T- |
100 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
From old datasheet system
MOS Field Effect Transistor
N-CHANNEL MOS FET 5-PIN 2 CIRCUITS
Silicon transistor
|
NEC Corp.
NEC[NEC]
|
| 2SK3717 |
N-channel Silicon J-FET
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
|
NEC
|
| 2SK3718 |
N-channel Silicon J-FET
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
|
NEC[NEC]
|
| 2SK3230B |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
N-CHANNEL SILICON J-FET
|
NEC
|
| 50N06-TA3-T 50N06-TF3-T 2SA102005 2SA1797-X-AA3-R |
SILICON PNP EPITAXIAL TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
SILICON PNP EPITAXIAL TRANSISTOR 进步党硅外延晶体
REVERSIBLE MOTOR DRIVER
NPN EPITAXIAL PLANAR TRANSISTOR
HIGH CURRENT SWITCHIG APPLICATIONS
HIGH CURRENT SWITCHING APPLICATIONS
HIGH VOLTAGE NPN TRANSISTOR
HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR
NPN SILICON TRANSISTOR
HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING (6V, 50mA)
HIGH-FREQUENCY AMPLIFIER TRANSISTOR
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR
SILICON PNP TRANSISTOR
LOW FREQUENCY PNP TRANSISTOR
MEDIUM POWER LOW VOLTAGE TRANSISTOR
MEDIUM POWER TRANSISTOR
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR
PNP EPITAXIAL PLANAR TRANSISTOR
50 Amps, 60 Volts N-CHANNEL POWER MOSFET
|
UNISONIC TECHNOLOGIES CO LTD
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Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| GT40G121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK231202 2SK231207 2SK2312 |
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L2-PI-MOSV) CHOPPER Regulator, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−?MOSV)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−ば-MOSV)
|
Toshiba Semiconductor
|
| 2SK3403NBSP 2SK3403 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
| HN1K05FU |
Field Effect Transistor Silicon N Channel MOS Type For Portable Devices High Speed Switching Applications Interface Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
| SSM3K17FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
| UPA800T UPA800T-T1 UPA800T-KB |
2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD
|
NEC[NEC]
|
| IRFP443R IRFF430R IRF731R IRF732R IRFP442R IRFP342 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 500MA I(D) | TO-250VAR
Rugged Series Power MOSFETs - N-Channel
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.75A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 5.5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 4.5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 7.7A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 8.7A I(D) | TO-247AC
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 10A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.3A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 5.5A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 4.5A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4.5A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6.8A I(D) | TO-247 晶体管| MOSFET的| N沟道| 600V的五（巴西）直| 6.8AI（四）|47
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5.4A I(D) | TO-204AA 晶体管| MOSFET的| N沟道| 600V的五（巴西）直| 5.4AI（四）|04AA
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 500V五（巴西）直| 4A条（丁）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2.25A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 450V五（巴西）直| 2.25AI（四）|05AF
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 1.35A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 1.35AI（四）|05AF
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4A I(D) | TO-204AA
|
International Rectifier, Corp.
Intersil, Corp.
Infineon Technologies AG
Fairchild Semiconductor, Corp.
|
