| PART |
Description |
Maker |
| PF01412A PF01412 |
IC,RF AMPLIFIER,HYBRID,MODULE,8PIN,PLASTIC
From old datasheet system
MOS FET Power Amplifier Module for E-GSM Handy Phone
|
Hitachi America
HITACHI[Hitachi Semiconductor]
|
| PF0311 |
MOS FET Power Amplifier Module for VHF Band
|
HITACHI[Hitachi Semiconductor]
|
| PF01410 PF01410A |
MOS FET Power Amplifier Module for GSM Handy Phone
|
HITACHI[Hitachi Semiconductor]
|
| M68731L 68731L |
From old datasheet system
SILICON MOS FET POWER AMPLIFIER / 135-155MHz / 7W / FM PORTABLE RADIO
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 135-155MHz, 7W, FM PORTABLE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| PF0314 PF0313 |
(PF0313 / PF0314) MOS FET Power Amplifier Module for VHF Band
From old datasheet system
|
HITACHI[Hitachi Semiconductor]
|
| M67799LA |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 400-430MHz, 7.5W, FM PORTABLE RADIO
SILICON MOS FET POWER AMPLIFIER 400-430MHz 7.5W FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PF08134B |
ASSP>Mobile Phones>RF Power Amplifiers
MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone
From old datasheet system
|
RENESAS[Renesas Electronics Corporation]
|
| UPA1716 UPA1716G PA1716 UPA1716G-E1 UPA1716G-E2 |
Pch enhancement type power MOS FET
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS Field Effect Transistor
|
NEC[NEC]
|
