| PART |
Description |
Maker |
| HY64LD16322M-DF85I HY64LD16322M-DF85E |
PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC
x16|2.5(VDD)2.5(VDDQ)V|85|Pseudo SRAM - 32M x16 | 2.5（VDD）在2.5（提供VDDQ）V | 85 |伪静态存储器- 32M
|
Hynix Semiconductor, Inc.
|
| MT58V1MV18D MT58L512Y36D MT58V512V32D MT58V512V36D |
16Mb SYNCBURST SRAM
|
Micron Technology
|
| MT58L256L36F |
8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM
|
Micron Technology
|
| IC61S25636T IC61S25636D IC61S25632T IC61S25632D IC |
8Mb SyncBurst Pipelined SRAM
From old datasheet system
SYNCHRONOUS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| HY62LF16201ALLF-85 HY62LF16201ALLF-85I HY62LF16201 |
Super Low Power Slow SRAM - 2Mb
x16 SRAM
|
Hynix Semiconductor
|
| MT58L1MV18D |
8Mb: 512K x 18, 256K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM 8MB的：12k × 1856 × 32/36 3.3V的I / O的流水线，双氰胺SYNCBURST的SRAM
|
Micron Technology, Inc.
|
| MT58L1MY18D MT58L512Y32D MT58L512Y36D MT58V512V36D |
16Mb SYNCBURST⑩ SRAM
16Mb SYNCBURST SRAM
|
MICRON[Micron Technology]
|
| GS820E32AGT-133 |
64K x 32 2Mb Synchronous Burst SRAM 64K X 32 CACHE SRAM, 10 ns, PQFP100
|
GSI Technology, Inc.
|
| MT58L64L32D MT58L64L36D |
(MT58LxxxLxxD) 2Mb SRAM
|
Micron Semiconductor
|
| M48Z2M1V-85PL1 |
16 MBIT (2MB X 8) ZEROPOWER SRAM
|
ST Microelectronics
|
| MT55L128L18F1 |
128K x 18, 3.3V I/O,ZBT SRAM(2Mb,3.3V输入/输出，静态RAM)
|
Micron Technology, Inc.
|
| K6F2016R4G-XF85 K6F2016R4G K6F2016R4G-F K6F2016R4G |
2Mb(128K x 16 bit) Low Power SRAM
|
SAMSUNG[Samsung semiconductor]
|
