| PART |
Description |
Maker |
| K7N163601M K7N161801M |
512Kx36 & 1Mx18-Bit Pipelined NtRAM TM
|
SAMSUNG[Samsung semiconductor]
|
| K7N163631B06 K7N161831B |
512Kx36 & 1Mx18 Pipelined NtRAM
512Kx36 & 1Mx18 Pipelined NtRAM
|
Samsung semiconductor
|
| K7N803601B K7N803649B-QC25 DS_K7N803601B K7M801825 |
512Kx36 & 1Mx18 Pipelined NtRAM
256Kx36 & 512Kx18-Bit Flow Through NtRAM
256Kx36 & 512Kx18-Bit Pipelined NtRAMTM
THERMISTOR, NTC; Series:B572; Thermistor type:NTC; Resistance:5R; Tolerance, resistance:20%; Beta value:2800; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree C); Case RoHS Compliant: Yes
256Kx36 & 512Kx18-Bit Pipelined NtRAM 256Kx36
|
http://
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7Q163652A K7Q161852A |
512Kx36 & 1Mx18 QDRTM b2 SRAM
Electrical Outlet Connector; Voltage Rating:125V; Contact Plating:Nickel; Current Rating:30A RoHS Compliant: Yes 512Kx36
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7S1636U4C |
512Kx36 & 1Mx18 QDR II b4 SRAM
|
Samsung semiconductor
|
| K7Q163664B-FC16 K7Q161864B-FC16 |
512Kx36 & 1Mx18 QDR TM b4 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM718V089 KM736V989 |
512Kx36 & 1Mx18 Synchronous SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7Q161852A |
512Kx36 & 1Mx18 QDRTM b2 SRAM
|
Samsung semiconductor
|
| K7K1618U2C K7K1636U2C |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| K7J163682B K7J161882B |
512Kx36 & 1Mx18 DDR II SIO b2 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K7Q161864B |
(K7Q161864B / K7Q163664B) 512Kx36 & 1Mx18 QDR TM b4 SRAM
|
Samsung semiconductor
|
