PART |
Description |
Maker |
HYB39L128160AT |
128-MBIT SYNCHRONOUS LOW-POWER DRAM
|
Infineon Technologies AG
|
IS42S32400B-6T IS42S32400B-7T IS42S32400B-6BL IS42 |
4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86
|
Integrated Silicon Solution, Inc.
|
HYB39S128160FE HYB39S128160FEL |
128-MBit Synchronous DRAM
|
Qimonda
|
HYB39S128160CTL-75 HYB39S128160CTL-8 HYB39S128160C |
128-MBit Synchronous DRAM 128兆位同步DRAM
|
Infineon Technologies AG Infineon Technologies A...
|
IS42S32400B-6BL |
4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
http://
|
IS42S16800B-7TLI |
16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solu...
|
IC42S16800L IC42S16800 IC42S16800-7T IC42S16800-7T |
4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
HYB39SC128160FE-6 HYI39SC128160FE-6 |
128-MBit Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Qimonda AG
|
NAND128W3A2BN6 NAND01BGR3A NAND01BGR3A0AN1T NAND01 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
IS62LV1216BLL |
128 K x 16 Low Voltage, Ultra Low Power CMOS SRAM(128 K x 16 低压,极低功耗CMOS静态RAM)
|
Integrated Silicon Solution, Inc.
|
M39P0R8070E2 M39P0R8070E2ZADE M39P0R8070E2ZADF |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位千兆位(x8/x1628 Byte/264字的页面.8V/3V,NAND闪存芯片
|
意法半导 STMicroelectronics N.V.
|