| PART |
Description |
Maker |
| APT6029BLL |
POWER MOS 7 600V 21A 0.290 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
| RJK6015DPM-00T1 |
600V - 21A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| APT1001R1HVR |
POWER MOS V 1000V 9A 1.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT10057WVR |
POWER MOS V 1000V 17.3A 0.570 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT10090BLL APT10090SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 1000V 12A 0.900 Ohm
|
Advanced Power Technology Ltd.
|
| APT10086BLC APT10086SLC |
POWER MOS VI 1000V 13A 0.860 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
|
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
|
| APT10025JVR |
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 34A 0.250 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| MU110 M819 MU17 MU18 |
POWER RECTIFIERS(1.0A /500-1000V)
POWER RECTIFIERS(1.0A,500-1000V)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| MU310 MU39 MU37 MU38 |
POWER RECTIFIERS(3.0A500-1000V)
POWER RECTIFIERS(3.0A,500-1000V)
|
MOSPEC[Mospec Semiconductor]
|
| APT10025JLC |
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
POWER MOS VI 1000V 34A 0.250 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| RF1S4N100SM |
4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs
|
New Jersey Semi-Conductor P...
|
