| PART |
Description |
Maker |
| MRF5S19100L MRF5S19100LR3 MRF5S19100LSR3 |
MRF5S19100LR3, MRF5S19100LSR3 1990 MHz, 22 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
1990 MHz, 22 W Avg., 2 x N–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| MHW9236 |
1990 MHz, 18 W Avg., 2 x N–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Motorola
|
| MRF6S21060N |
2110鈥?170 MHz, 14 W Avg., 28 V, 2 x W鈥揅DMA Lateral N鈥揅hannel RF Power MOSFETs
|
MOTOROLA
|
| MRF5P21240 |
2170 MHz, 52 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel Broadband RF Power MOSFET
|
Motorola
|
| MRF5P20180R6 MRF5P20180 |
MRF5P20180R6 1990 MHz, 38 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET
RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| MRF5S19150H MRF5S19130HR306 MRF5S19130HSR3 MRF5S19 |
RF Power Field Effect Transistors
MRF5S19130HSR3 1930-1990 MHz, 26 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
FREESCALE[Freescale Semiconductor, Inc]
MOTOROLA
|
| PT75KN16 |
75 Avg 1600 Ｖolts
|
Nihon Inter Electronics Corporation
|
| PT151S81 NIHONINTERELECTRONICSCORP-PT151S8 |
150A Avg 800 Volts
|
Nihon Inter Electronics Corporation
|
| PDT20116 PDT201161 |
150A Avg 800 Volts
|
Nihon Inter Electronics Corporation
|
