| PART |
Description |
Maker |
| M374F3200DJ1-C M374F3280DJ1-C |
32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM372V3280CS1 KMM372V3200CS1 |
32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KMM374F3280BK |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块）
|
Samsung Semiconductor Co., Ltd.
|
| KMM372V3280BK3 |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块）
|
Samsung Semiconductor Co., Ltd.
|
| KMM372V410CS KMM372V400CK KMM372V400CS KMM372V410C |
4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KMM372C804BS |
8M x 72 DRAM DIMM with ECC using 4M16, 4K Refresh, 5V
|
Samsung semiconductor
|
| HYMD232726B8J-J HYMD232726B8J-D43 HYMD232726B8JD4 |
32M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
DDR SDRAM - Unbuffered DIMM 256MB
|
Hynix Semiconductor, Inc.
|
| KMM372V413CK |
4M x 72 DRAM DIMM with ECC using 2Mx8, Dual Bank 2K Refresh, 3.3V
|
http://
|
| KMM372V413CK KMM372V413CS |
From old datasheet system
4M x 72 DRAM DIMM with ECC using 2Mx8, Dual Bank 2K Refresh, 3.3V
|
SAMSUNG[Samsung semiconductor]
|
| HCPMEM-512 |
EDO DRAM Board 512Mbyte ( 32M x 144-Bit ) organized as 4Banks of 8Mx144, 4K Ref., 3.3V, ECC EDO公司的DRAM局512Mbyte2M的144位）筹办8Mx144K的参Banks。，3.3伏，环境保护运动委员
|
Hanbit Electronics Co.,Ltd.
|
| HSD32M72D18R-10 HSD32M72D18R-10L HSD32M72D18R-12N |
Synchronous DRAM Module 256Mbyte (32Mx72bit), DIMM with ECC based on 16Mx8, 4Banks, 4K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd
|
| HMD16M72D9A-F10 HMD16M72D9A-10 HMD16M72D9A-13 HMD1 |
SYNCHRONOUS DRAM MODULE 128MBYTE (8MX72BIT),DIMM WITH ECC BASED ON 16MX8, 4BANKS, 4K REF., 3.3V
|
Hanbit Electronics Co.,Ltd
|
