PART |
Description |
Maker |
IXTL15N20 IXTL8P40 IXTL5N65 IXTL5P40 IXTL6N60 IXTM |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-254 TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 8A I(D) | TO-254 TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 5A I(D) | TO-254 TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-254 TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-204AC TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 24A I(D) | TO-254 TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-218VAR TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 600V的五(巴西)直| 6A条(丁)| TO - 220AB现有 TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 10A I(D) | TO-254 晶体管| MOSFET的| P通道| 200伏五(巴西)直| 10A条(丁)|254 TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 5A I(D) | TO-254 晶体管| MOSFET的| N沟道|650V五(巴西)直| 5A条(丁)|54 TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 7A I(D) | TO-3 晶体管| MOSFET的| P通道| 150伏五(巴西)直| 7A条(丁)| TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-210AC 晶体管| MOSFET的| N沟道| 500V五(巴西)直|3A条(丁)|10AC TRANSISTOR | MOSFET | P-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-220 晶体管| MOSFET的| P通道| 500V五(巴西)直| 5A条(丁)|220
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MITSUMI ELECTRIC CO., LTD. Infineon Technologies AG HIROSE ELECTRIC Co., Ltd.
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FX6ASH3 FX6ASH2 FX6UMH3 FX6VSH3 FX6SMH3 FX6KMH2 FX |
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-220AB TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-247VAR TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-220AB TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-247VAR TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 20A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 100V的五(巴西)直| 20A条(丁)|52AA TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 3A I(D) | TO-220AB 晶体管| MOSFET的| P通道| 150伏五(巴西)直| 3A条(丁)| TO - 220AB现有
|
Cooper Bussmann, Inc.
|
IRFP243R IRFF122R IRFF123R IRF621R IRFP140R IRFF12 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 5A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5A I(D) | TO-220AB TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 31A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 8A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 80V的五(巴西)直| 8A条(丁)|05AF TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 4.9A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 100V的五(巴西)直| 4.9AI(四)| TO - 220AB现有 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 100V的五(巴西)直| 1A条(丁)|50VAR TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 28A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 80V的五(巴西)直| 28A条(丁)|04AE TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 600MA I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 150伏五(巴西)直| 600毫安(丁)|50VAR TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 100V的五(巴西)直|5A条(丁)|04AE
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Black Box, Corp. Bourns, Inc. Vishay Intertechnology, Inc. Samsung Semiconductor Co., Ltd. 3M Company
|
BUZ100SL-4 |
Quad-Channel SIPMOS Power Transistor SIPMOS ? Power Transistor SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 7.4 A, 55 V, 0.023 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28 20 characters x 1 Lines, 5x7 Dot Matric Character and Cursor 7.4 A, 55 V, 0.023 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
http:// Siemens Semiconductor Group Infineon Technologies AG SIEMENS AG
|
MG50Q2YS9 MG100M2CK1 MG200H2CK1 GT60M103 MG400H1FK |
50 A, 1200 V, N-CHANNEL IGBT 100 A, 880 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR 200 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR 150 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR 400 A, 600 V, N-CHANNEL IGBT
|
|
NDT410EL NDT410ELJ23Z |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 2.1A I(D) | SOT-223 N-Channel Logic Level Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|
MTH8N90 |
TRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,8A I(D),TO-218AC POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS
|
MOTOROLA[Motorola, Inc]
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BUZ102SL-4 |
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 6.2 A, 55 V, 0.033 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET SIPMOS ? Power Transistor Quad-Channel SIPMOS Power Transistor
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
|
2SK3079A |
Field Effect Transistor Silicon N Channel MOS Type 470 MHz Band Amplifier Applications TRANSISTOR,MOSFET,N-CHANNEL,10V V(BR)DSS,3A I(D),RFMOD TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba. TOSHIBA[Toshiba Semiconductor]
|
2SJ201O 2SJ201 |
Field Effect Transistor Silicon P Channel MOS Type High Power Amplifier Application TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 12A I(D) | TO-247VAR
|
TOSHIBA
|
STD8N06 3550 STD8N06-1 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 8A I(D) | TO-251 晶体管| MOSFET的| N沟道| 60V的五(巴西)直| 8A条(丁)|51 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR From old datasheet system
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ST Microelectronics Electronic Theatre Controls, Inc. STMicroelectronics
|