| PART |
Description |
Maker |
| HY5DU561622ETP HY5DU561622ETP-28 HY5DU561622ETP-33 |
256M(16Mx16) gDDR SDRAM
|
Hynix Semiconductor
|
| HY5DU121622CTP-4 HY5DU121622CTP-5 HY5DU121622CTP-6 |
512Mb(32Mx16) GDDR SDRAM
|
Hynix Semiconductor
|
| HY5DU283222AQ HY5DU283222AQ-33 HY5DU283222AQ-36 HY |
128M(4Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
| HY5DU113222FM-2 HY5DU113222FM-22 HY5DU113222FM-25 |
512M(16Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
| W9412G2CB |
1M × 4 BANKS × 32 BITS GDDR SDRAM
|
Winbond
|
| HY5DU283222F-36 HY5DU283222F-28 HY5DU283222F-26 |
128M(4Mx32) GDDR SDRAM
|
Hynix Semiconductor Inc.
|
| K4D261638F-TC33 K4D261638F-TC25 K4D261638F-TC40 K4 |
128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存
8M X 16 DDR DRAM, 0.55 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
8M X 16 DDR DRAM, 0.55 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
DiCon Fiberoptics, Inc.
|
| HY5DU281622ETP-25 HY5DU281622ETP-26 HY5DU281622ETP |
128M(8Mx16) gDDR SDRAM
8M X 16 DDR DRAM, 0.6 ns, PDSO66
8M X 16 DDR DRAM, 0.55 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
| HY5V66GF HY5V66GF-H HY5V66GF-P |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM
4Mx16|3.3V|4K|H|SDR SDRAM - 64M
x16 SDRAM x16内存
|
Hynix Semiconductor
TT electronics Semelab, Ltd.
|
| EM6A9320 EM6A9320BI-28 EM6A9320BI-30 EM6A9320BI-33 |
285MHz 2.8V 4M x 32 DDR SDRAM
300MHz 2.8V 4M x 32 DDR SDRAM
333MHz 2.8V 4M x 32 DDR SDRAM
350MHz 2.8V 4M x 32 DDR SDRAM
4M x 32 DDR SDRAM 4米32 DDR SDRAM内存
|
ETRON[Etron Technology, Inc.]
Etron Technology Inc.
ETRON[Etron Technology Inc.]
|
| HYS64V4200GDL-7.5 HYS64V8220GDL HYS64V4200GDL-8-X |
x64 SDRAM Module
3.3 V SDRAM Modules(3.3 V 同步动态RAM模块)
3.3 V SDRAM Module(3.3 V SDRAM 模块)
4M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, ZMA144
|
SIEMENS AG
INFINEON TECHNOLOGIES AG
|
