| PART |
Description |
Maker |
| NE5520379A-T1A-A NE5520379A |
NECS 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET
|
California Eastern Labs
|
| NE46134-T1-AZ |
NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR
|
California Eastern Laboratories
|
| UPG2227T5F-E2-A UPG2227T5F |
NECs L-BAND SP3T SWITCH
|
CEL[California Eastern Labs]
|
| UPG2179TB UPG2179TB-E4-A |
NECs 1.5W L, S-BAND SPDT SWITCH
NECs 1.5W L/ S-BAND SPDT SWITCH
|
NEC Corp.
NEC[NEC]
|
| UPG2012TB UPG2012TB-E3 |
From old datasheet system
NECs 1/4W SINGLE CONTROL L-BAND SPDT SWITCH
|
NEC[NEC]
|
| UPG2024TQ-E1-A |
NECs GaAs MMIC DPDT SWITCHES FOR 5 GHz BAND WIRELESS LAN
|
California Eastern Laboratories
|
| NESG250134-AZ NESG250134-EV09 NESG250134-T1-AZ |
NECs NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFIVATION (800mW) 3-PIN OWER MINIMOLD (34 PACKAGE) 邻舍npn型硅锗射频晶体管介质输出功率AMPLIFIVATION00mW的）3针奥尔MINIMOLD34包）
|
Duracell
California Eastern Laboratories, Inc.
|
| UPD5710TK UPD5710TK-E2-A |
2-WIRE FACTORY PROGRAMMED W/TIN PLATING
NECs WIDE BAND SINGLE CONTROL CMOS SPDT SWITCH
|
NEC Corp.
NEC[NEC]
|
| FLL1200IU-2 |
L-Band Medium & High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET
L-Band Medium & High Power GaAs FET
|
Fujitsu Component Limited.
Fujitsu, Ltd.
Fujitsu Limited
|
| FLU17XM |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
L-Band Medium & High Power GaAs FET
|
FUJITSU LTD
EUDYNA[Eudyna Devices Inc]
|
| FLL200IB-3 FLL200IB-2 FLL200IB-1 |
L-Band Medium & High Power GaAs FET
L-Band Medium & High Power GaAs FET L波段中等
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
Sumitomo Electric Industries, Ltd.
|
