PART |
Description |
Maker |
HAT2058R-EL-E HAT2058RJ-EL-E HAT2058R05 |
4 A, 100 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8 Silicon N Channel Power MOS FET High Speed Power Switching
|
Analog Devices, Inc. Renesas Electronics Corporation
|
HAT1024R-EL-E HAT1024R-15 |
3.5 A, 30 V, 0.34 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8 Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics, Corp. Renesas Electronics Corporation
|
UPA2700TP |
SWITCHING N- AND P-CHANNEL POWER MOS FET SWITCHING N-CHANNEL POWER MOSFET 开N沟道功率MOSFET
|
NEC, Corp.
|
UPA2707TP UPA2707TP-E2-AZ UPA2707TP-E1 UPA2707TP-E |
SWITCHING N-CHANNEL POWER MOSFET 开关N沟道功率MOSFET SWITCHING N- AND P-CHANNEL POWER MOS FET
|
NEC, Corp. NEC Corp. NEC[NEC]
|
RJK0368DPA-00-J0 RJK0368DPA10 |
20 A, 30 V, 0.0224 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8 Silicon N Channel Power MOS FET Power Switching Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
UPA2716GR |
SWITCHING P-CHANNEL POWER MOSFET SWITCHING N- AND P-CHANNEL POWER MOS FET
|
NEC[NEC]
|
UPA2712GR |
SWITCHING N- AND P-CHANNEL POWER MOS FET SWITCHING P-CHANNEL POWER MOSFET
|
NEC[NEC]
|
2SK2137 |
V(dss): 600V; V(gss): 30V; I(d): 4A; 30W; switching N-channel power MOSFET. For industrial use MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
MIG20J806HA MIG20J806H EE08617 |
Silicon N-channel integrated IGBT module for high power switching, motor control applications N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS From old datasheet system N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) N通道IGBT的(大功率开关,马达控制应用
|
TOSHIBA[Toshiba Semiconductor] Toshiba, Corp.
|
HAT1126R HAT1126R-EL-E HAT1126RJ HAT1126RJ-EL-E |
Transistors>Switching/MOSFETs Silicon P Channel Power MOS FET High Speed Power Switching P通道功率MOS FET的高速电源开
|
Renesas Electronics Corporation. Renesas Electronics, Corp.
|
HAT1055R HAT1055RJ |
Transistors>Switching/MOSFETs Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
GT15Q101 E001909 |
Silicon N-Channel IGBT for High Power Switching Application(用于大功率转换的N沟道绝缘栅双极型晶体 N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) From old datasheet system N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)
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http:// Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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