| PART |
Description |
Maker |
| RM400HV-34S |
CAP CER 22000PF 10% 50V X8R 0805
HIGH SPEED SWITCHING USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CTZ3.0 CTZ2.6 CTZ2.7 CTZ2.X CTZ15 |
(CTZ2.6 - CTZ47) HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD
(CTZxx) HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD
|
CDIL
|
| BAS70-07W BAS7007W Q62702-A1186 |
Silicon Schottky Diode (General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| RM50C1A-XXF RM50DA/CA/C1A-XXF RM50CA-XXF RM50DA-XX |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for Bipolar speed switching)
|
Mitsubishi Electric Corporation
|
| BAV99 Q68000-A549 |
SILICON SWITCHING DIODE ARRAY (FOR HIGH-SPEED SWITCHING CONNECTED IN SERIES)
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| SMBD7000 MMBD7000 SMBD7000/MMBD7000 |
General Purpose Diodes - Silicon Switching Diode Array for high-speed switching
|
INFINEON[Infineon Technologies AG]
|
| Q62702-A1050 BAS16W |
Silicon Switching Diode (For high speed switching applications) 0.25 A, SILICON, SIGNAL DIODE
From old datasheet system
|
SIEMENS AG
Siemens Semiconductor Group
|
| BAV99W BAV99S BAV99B5003 |
Silicon Switching Diode
For high-speed switching applications
|
Infineon Technologies AG
|
| Q62702-A1030 BAV70W |
From old datasheet system
SILICON SWITCHING DIODE ARRAY (FOR HIGH SPEED SWITCHING APPLICATIONS COMMON CATHODE)
|
Siemens Semiconductor Group
SIEMENS AG
|
| CMHD4448 |
HIGH SPEED SWITCHING DIODE 0.25 A, 100 V, SILICON, SIGNAL DIODE
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
|
