PART |
Description |
Maker |
SLA4031 SLA4010 |
Independent BJT Power Module Darlington BJT Array From old datasheet system
|
Sanken
|
DE150-201N09-00 DE375-501N21-00 DE275-102N05-00 DE |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 9A I(D) TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 21A I(D) TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 5A I(D) 晶体管| MOSFET功率模块|独立| 1KV交五(巴西)直| 5A条(丁) TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 300V V(BR)DSS | 35A I(D) 晶体管| MOSFET功率模块|独立| 300V五(巴西)直| 35A条(丁) TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 4.5A I(D)
|
TE Connectivity, Ltd. Glenair, Inc.
|
ET127 |
Transistor - BJT and MOS-BJT Power Module
|
Fuji Semiconductors
|
CM600HA-24H |
TRANSISTOR,IGBT POWER MODULE,INDEPENDENT,1.2KV V(BR)CES,600A I(C)
|
Mitsubishi
|
1MBI600LP060 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 600A I(C)
|
|
CZ300R10KN CC150R10KN CC50R10KN |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 880V V(BR)CEO | 300A I(C) 晶体管|晶体管电源模块|达林顿| 880V五(巴西)总裁| 300我(丙) TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 880V V(BR)CEO | 150A I(C) 晶体管|晶体管电源模块|半桥|达林顿| 880V五(巴西)总裁| 150A一(c TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 880V V(BR)CEO | 50A I(C) 晶体管|晶体管电源模块|半桥|达林顿| 880V五(巴西)总裁| 50A条一(c
|
ON Semiconductor RECOM Electronic GmbH
|
1DI300M-050 |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 450V V(BR)CEO | 300A I(C) Power Transistor Module
|
Fuji Electric
|
GP300LSS16S |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.6KV V(BR)CES | 300A I(C) 晶体管| IGBT功率模块|独立| 1.6KV五(巴西)国际消费电子展| 300我(丙)
|
TE Connectivity, Ltd.
|
2MI50F050 |
TRANSISTOR,MOSFET POWER MODULE,INDEPENDENT,500V V(BR)DSS,50A I(D)
|
fuji
|
ETN36-030 |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 400V V(BR)CEO | 300A I(C) 晶体管|晶体管电源模块|达林顿| 400V五(巴西)总裁| 300我(丙)
|
Unisonic Technologies Co., Ltd.
|
ESM3045AV |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 450V V(BR)CEO | 24A I(C) 晶体管|晶体管电源模块|达林顿| 450V五(巴西)总裁| 24A条一(c
|
Rectron Semiconductor
|