| PART |
Description |
Maker |
| BR24L01AF-W BR24L01AFV-W BR24L01AFVM-W BR24L01 BR2 |
1288 bit electrically erasable PROM
128】8 bit electrically erasable PROM
|
ROHM[Rohm]
|
| X2816AM |
2048 x 8-Bit / Electrically EPROM
ELECTRICALLY ERASABLE PROM
|
Xicor Inc.
|
| 28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
| HN462716 HN462716G |
2048-WORD x 8-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE ONLY MEMORY
2048 word x 8 Bit UV Erasable and EPROM
|
HITACHI[Hitachi Semiconductor]
|
| AM2864AE |
8192 x 8-Bit Electrically Erasable PROM
|
AMD
|
| BR24L04FVM-W BR24L04-W |
512×8 bit electrically erasable PROM
|
Rohm
|
| BR24L08-W07 |
1024×8 bit electrically erasable PROM
|
Rohm
|
| IS93C76A IS93C86A |
(IS93C76A / IS93C86A) 8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
|
ISSI
|
| BR93LC66FV BR93LC66 BR93LC66RF BR93LC66F |
4,096-Bit Serial Electrically Erasable PROM
|
ROHM[Rohm]
|
| M6M80021 M6M80021FP M6M80021P |
2048 BIT ELECTRICALLY ERASABLE AND RPOGRAMMABLE ROM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
