| PART |
Description |
Maker |
| N04L1630C2BT2 N04L1630C2B N04L1630C2BB2 N04L1630C2 |
256K X 16 STANDARD SRAM, 70 ns, PDSO44
4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K 】 16 bit POWER SAVER TECHNOLOGY TM
4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K × 16 bit POWER SAVER TECHNOLOGY TM
|
ON SEMICONDUCTOR
AMI[AMI SEMICONDUCTOR]
|
| V53C104HK55L V53C104HP60L |
IC OPAMP DUAL 16V DIP8
ULTRA-HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM 超高性能，低功耗，256K × 4位快速页面模式的CMOS动态随机存储器
|
Mosel Vitelic, Corp.
|
| IC62VV25616LL IC62VV25616L IC62VV25616LL-70TI IC62 |
OSC 5V 14PIN TTL 256Kx161.8V和超低功耗CMOS静态RAM
256Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM 256Kx161.8V和超低功耗CMOS静态RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
70ns; 1.8V; 256K x 16 ultra low power CMOS static RAM
|
Integrated Circuit Solu...
Fuji Electric Holdings Co., Ltd.
ICSI[Integrated Circuit Solution Inc]
|
| IS65WV25616DBLL-55CTLA3 IS62WV25616DALL-55TI IS62W |
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
|
Integrated Silicon Solution, Inc
|
| IS62VV25616LL-85M IS62VV25616LL-85MI IS62VV25616LL |
256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| BS616UV4010EI BS616UV4010 BS616UV4010BC BS616UV401 |
Ultra Low Power/Voltage CMOS SRAM 256K X 16 bit
|
BSI[Brilliance Semiconductor]
|
| N04L63W1AB27I N04L63W1AB27IT N04L63W1AT27I N04L63W |
4 Mb Ultra-Low Power Asynchronous CMOS SRAM
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K 隆驴 16 bit
|
ON Semiconductor
|
| V62C1802048LL-70T V62C1802048LL-85T V62C1802048LL- |
Ultra Low Power 256K x 8 CMOS SRAM 超低功56K × 8 CMOS SRAM
|
Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
MOSEL[Mosel Vitelic Corp]
|
| N04Q16YYC2B N04Q1612C2BB-15C N04Q1612C2BB-15I N04Q |
4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K×16 bit POWER SAVER TECHNOLOGY
4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K】16 bit POWER SAVER TECHNOLOGY
|
http://
NANOAMP[NanoAmp Solutions, Inc.]
|
| IC62VV1008LL IC62VV1008L IC62VV1008L-100B IC62VV10 |
70ns; 1.8V; 1M x 8 ultra low power CMOS static RAM
1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
100ns; 1.8V; 1M x 8 ultra low power CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| P4C1026-25J4C P4C1026-15CC P4C1026-15CI P4C1026-15 |
ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM 256K X 4 STANDARD SRAM, 20 ns, PQCC28
ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM 256K X 4 STANDARD SRAM, 35 ns, PQCC32
ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM 256K X 4 STANDARD SRAM, 35 ns, PQCC28
ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM 256K X 4 STANDARD SRAM, 20 ns, PDIP28
ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM 256K X 4 STANDARD SRAM, 35 ns, PDIP28
ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM 256K X 4 STANDARD SRAM, 35 ns, PDSO28
ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM 256K X 4 STANDARD SRAM, 20 ns, PDSO28
|
Pyramid Semiconductor, Corp.
Pyramid Semiconductor Corporation
Pyramid Semiconductor C...
|
| BS62LV2001TI BS62LV2001 BS62LV2001DC BS62LV2001DI |
Very Low Power/Voltage CMOS SRAM 256K X 8 bit
Very low power/voltage CMOS SRAM 256K X 8 bit, 70ns
Very low power/voltage CMOS SRAM 256K X 8 bit, 100ns
|
Brilliance Semiconducto...
BSI[Brilliance Semiconductor]
|
