| PART |
Description |
Maker |
| LET19060C |
RF POWER TRANSISTORS Ldmos Enhanced Technology RF功率晶体管LDMOS的增强技
RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| LET9085 |
RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY
RF POWER TRANSISTORS Ldmos Enhanced Technology
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| AN1224 |
LDMOS RF POWER TRANSISTORS FOR FM BROADBOARD APPLICATION
|
SGS Thomson Microelectronics
|
| LET20015 |
RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE
|
ST Microelectronics
|
| LET21004 |
RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE
|
STMICROELECTRONICS[STMicroelectronics]
|
| PTFB183404E PTFB183404F |
High Power RF LDMOS Field Effect Transistors 340 W, 1805 ?1880 MHz
|
Infineon Technologies AG
|
| BLA1011-300 LA1011-300 |
Avionics LDMOS transistors
Avionics LDMOS transistor BLA1011-300<SOT957A (LDMOST)|<<http://www.nxp.com/packages/SOT957A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLL1214-250R |
L-band radar LDMOS transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET
L-band radar LDMOS transistor BLL1214-250R<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
LDMOS L-band radar power transistor
|
NXP Semiconductors N.V.
|
| 0805 1008 T491X226K035AS 100B100JCA500X 100B120JP5 |
RF LDMOS Wideband Integrated Power Amplifiers
MW4IC001MR4 W-CDMA 0.8-2.17 GHz, 900 mW, 28 V RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, In...
FREESCALE[Freescale Semiconductor, Inc]
Motorola
|
| BLF6G22L-40BN |
40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| BLF871S112 BLF871-15 |
A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.
UHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
