| PART |
Description |
Maker |
| M5M5256DFP-70VLL-I M5M5256DFP-70VXL-I M5M5256DFP-8 |
32K X 8 STANDARD SRAM, 85 ns, PDSO28 8 X 13.40 MM, TSOP-28
32K X 8 STANDARD SRAM, 85 ns, PDSO28 0.450 INCH, SOP-28
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位（32768 - Word8位）的CMOS静态RAM
From old datasheet system
|
Maxim Integrated Products, Inc.
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| HM62256BLFP10 HM62256BLFP8 HM62256BLFP-4SLT |
32768-word x 8-bit high speed CMOS static RAM, 45ns
IC-SM-256K CMOS SRAM
|
Hitachi Semiconductor
|
| HN58C256FP-20 |
32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM
|
Hitachi Semiconductor
|
| TC55257BFL-10L TC55257BFL-85 TC55257BPL-10 TC55257 |
85ns; V(dd/in): -0.3 to 7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM
(TC55257xxx) SILICON GATE CMOS 32768 WORD X 8 BIT STATIC RAM
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM 硅栅CMOS 32768字8位静态RAM
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Toshiba, Corp.
|
| M5M5256DFP-70G M5M5256DFP-70GI M5M5256DVP-70G M5M5 |
32K X 8 STANDARD SRAM, 70 ns, PDSO28
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
Memory>Low Power SRAM
|
Renesas Electronics Corporation
|
| M6MGB331S8BKT M6MGT331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| HN58C256ASERIES 58C256A |
32768-word ′ 8-bit Electrically Erasable and
From old datasheet system
|
hitachi
|
| M6MGD967W3 |
100,663,296-BIT (6,291,456-WORD BY 16-BIT) CMOS FLASH MEMORY &33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS Mobile RAM
|
RENESA
|
| HM65256B |
32768 word x 8 Bit High Speed Psuedo Statie RAM
|
Hitachi
|
| TC55VBM316AFTN TC55VBM316AFTN40 TC55VBM316AFTN55 T |
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| UPD27C256A |
32768 x 8-Bit CMOS UV EPROM
|
NEC Electronics
|
| MS52C1162A |
65,536-Word × 16-Bit or 131,072-Word × 8-Bit STATIC RAM 1,048,576-Word × 16-Bit or 2,097,152-Word × 8-Bit One Time PROM(64k字6位或128k字位静态RAM 1M字6位或2M字OTPROM)
|
OKI SEMICONDUCTOR CO., LTD.
|
