| PART |
Description |
Maker |
| K9K2G16Q0M-Y K9K2G16Q0M-P K9K2G08U0M-F K9K2G08Q0M- |
SSR H/S IO 230V 20A 4-32VDC
SSR H/S ZS 600V 70A 4-32VDC
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory 256M × 8 128M的16位NAND闪存
ULTRA2 LVD SCSI INTERNAL CBL 3 256M × 8 128M的16位NAND闪存
DSUB 25 M PCR/A G
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V
512Mb/256Mb 1.8V NAND Flash Errata
64M x 8 bit NAND flash memory, 1.70 - 1.95V
32M x 16 bit NAND flash memory, 2.7 - 3.6V
32M x 16 bit NAND flash memory, 1.70 - 1.95V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9E2G08U0M K9E2G08U0M-F K9E2G08U0M-P K9E2G08U0M-V |
256M x 8 Bits NAND Flash Memory
|
Samsung Electronic
Samsung semiconductor
|
| TE28F640J3 TE28F256J3 TE28F320J3C-110 TE28F128J3A- |
8M X 16 FLASH 2.7V PROM, 120 ns, PDSO56
Intel StrataFlash Memory (J3)
Strata Flash Memory 256M
256M Strata Flash Memory
|
NUMONYX
Intel Corporation
|
| K9F6408U0A-TCB0 K9F6408U0A-TIB0 |
From old datasheet system
EEPROM,NAND FLASH,8MX8,CMOS,TSOP,44PIN,PLASTIC
8M x 8 Bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
Samsung Electronics Inc
|
| K9F8008W0M- K9F8008W0M-TCB0 K9F8008W0M-TIB0 K9K120 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
1M x 8 bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K9F2808U0B-DCB0 K9F2808Q0B-DIB0 K9F2808U0B-YIB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit NAND Flash Memory 1,600 × 8位NAND闪存
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| W29GL256SH9C W29GL256SL9B W29GL256SL9C W29GL256SH9 |
256M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE
|
Winbond
|
| HN29W25611T-50 |
256M AND type Flash Memory More than 16/057-sector (271/299/072-bit)
256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
|
Hitachi Semiconductor
Hitachi,Ltd.
|
| CA20C03A20EP CA20C03A-20IP CA20C03A-20IN CA20C03A2 |
N-CHANNEL 550V @Tjmax - 2.5 Ohm - 3A DPAK/IPAK ZENER-PROTECTED MDMESH POWER MOSFET
Dual 2-input NAND gate
DUAL 2-INPUT OPEN DRAIN NAND GATE
Dual bilateral switch
8-bit MCU with Flash or ROM memory, ADC, two 16-bit timers, I2C, SPI, SCI interfaces
8-bit microcontroller with single voltage Flash memory, data EEPROM, ADC, timers, SPI 数据加密处理
ST7LITE2 - 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, TIMERS, SPI 数据加密处理
Dual 2-input exclusive OR gate 数据加密处理
|
Belden, Inc.
3M Company
|
| LE25FU206 LE25FU206MA |
2M-bit Serial Flash Memory
256M X 8 FLASH 2.7V PROM, PDSO8
|
Sanyo Semicon Device
|
