PART |
Description |
Maker |
1N581707 1N5819-E3/54 1N5819-E3/73 1N5819-E3_54 1N |
DIODE 1 A, 40 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN, Signal Diode Schottky Barrier Rectifiers
|
Vishay Semiconductors Vishay Siliconix
|
SF4001 |
DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
|
Vishay Semiconductors
|
CPR1-120LEADFREE CPR1-080LEADFREE CPR1-100LEADFREE |
1 A, 1200 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN 1 A, 800 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN 1 A, 1000 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN 1 A, 100 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN 1 A, 600 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN 1 A, 400 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN 1 A, 200 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
|
Central Semiconductor, Corp.
|
EGF1C |
DIODE 1 A, 150 V, SILICON, SIGNAL DIODE, DO-214BA, PLASTIC, GF1, 2 PIN, Signal Diode
|
Vishay Semiconductors
|
1N914 |
DIODE 0.075 A, SILICON, SIGNAL DIODE, DO-204AH, GLASS, DO-35, 2 PIN, Signal Diode
|
Vishay Semiconductors
|
BAT85 |
DIODE 0.2 A, 30 V, SILICON, SIGNAL DIODE, DO-204AH, GLASS, DO-35, 2 PIN, Signal Diode
|
Vishay Semiconductors
|
BAS40 |
DIODE 0.2 A, 40 V, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode
|
Vishay Semiconductors
|
1N914BWS 1N4148WS |
Small Signal Diode; Package: SOD-323F; No of Pins: 2; Container: Tape & Reel 0.15 A, 100 V, SILICON, SIGNAL DIODE Small Signal Diodes
|
Fairchild Semiconductor, Corp.
|
1N6662US 1N6663US 1N6661US JAN1N6662US JANTXV1N666 |
VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS Signal or Computer Diode; Package: A_SQ._MELF; IO (A): 0.5; IFSM (A): 5; Cj (pF): 20; Vrwm (V): 400; VF (V): 1; IR (µA): 0.05; 0.5 A, SILICON, SIGNAL DIODE, DO-35 Signal or Computer Diode; Package: A_SQ._MELF; IO (A): 0.5; IFSM (A): 5; Cj (pF): 20; Vrwm (V): 225; VF (V): 1; IR (µA): 0.05; 0.5 A, SILICON, SIGNAL DIODE, DO-35
|
Microsemi Corporation Microsemi, Corp.
|
1N6661 |
Signal or Computer Diode; Package: B; IO (A): 0.5; IFSM (A): 5; Cj (pF): 20; Vrwm (V): 225; VF (V): 1; IR (µA): 0.05; 0.5 A, SILICON, SIGNAL DIODE, DO-35
|
Microsemi, Corp.
|
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