| PART |
Description |
Maker |
| IRIS-G6651 |
IRIS-G6651 is a hybrid IC consists from power MOSFET and a controller IC
IRIS-G6651 is a hybrid IC consists from power MOSFET and a controller IC
|
IRF[International Rectifier]
|
| IRIS-G6353 |
Hybrid IC consists from power MOSFET and a controller IC
|
IRF[International Rectifier]
|
| PTM-84B-100B PTM-84B-500B PTB-84B-100B PTB-84B-500 |
-100V Single P-Channel Hi-Rel MOSFET in a 18-pin LCC package 模拟IC
450V Hybrid Controller IC and HEXFET Power MOSFET for Quasi-Resonant including low frequency PRC Fly-Back Converter type SMPS Applications packaged in a 5-Lead TO-220
650V Hybrid Controller IC and HEXFET Power MOSFET for Quasi-Resonant including low frequency PRC Fly-Back Converter type SMPS Applications packaged in a 5-Lead TO-220
8-BIT DIGITAL PHASE SHIFTER
|
NXP Semiconductors N.V.
Merrimac Industries, Inc.
|
| IRFR6215PBF IRFU6215PBF IRFR6215TR IRFR6215TRL IRF |
Advanced Process Technology
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
175°C Operating Temperature
|
International Rectifier
|
| IRFIB7N50A IRFIB7N50APBF |
6.6 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=6.6A)
HEXFET? Power MOSFET
500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
| STK416-090-E |
Thick-Film Hybrid IC 3-Channel Power Switching Audio Power IC 80W80W80W
|
Sanyo Semicon Device
|
| NTE1340 |
Integrated Circuit Module, Hybrid, Audio Power Amplifier, 24W 2 Power Supplies Required
|
NTE[NTE Electronics]
|
| IRFI634G ORFO634G |
POWER MOSFET 功率MOSFET
Power MOSFET(Vdss=250V / Rds(on)=0.45ohm / Id=5.6A)
250V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| NTE1337 |
Integrated Circuit Module − Hybrid, Audio Power Amp 70 Watt, 2 Power Supplies Required
|
NTE Electronics
|
| AM29LV010B-45RJC AM29LV010B-55JC AM29LV010B-55JE A |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST Package
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
20V Dual N-Bidirectional HEXFET Power MOSFET in a 6-Lead FlipFET
30V N-Channel PowerTrench MOSFET 30VN沟道的PowerTrench MOSFET
-12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package x8闪存EEPROM
1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 3V PROM, 70 ns, PQCC32
x8 Flash EEPROM x8闪存EEPROM
|
Toshiba, Corp.
Advanced Micro Devices, Inc.
Spansion, Inc.
|
| NTD18N06LT4G NTD18N06 NTD18N06L NTD18N06L-1 NTD18N |
Power MOSFET 18 A, 60 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 18 Amps, 60 Volts, Logic Level N-Channel DPAK
|
ONSEMI[ON Semiconductor]
|
| IRF5802 IRF5802TR |
150V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
Power MOSFET(Vdss=150V, Id=0.9A)
Power MOSFET(Vdss=150V/ Id=0.9A)
0.9 A, 150 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IRF[International Rectifier]
|
