PART |
Description |
Maker |
MRF18085AR3 MRF18085ALSR3 |
RF Power Field Effect Transistors GSM/GSM EDGE 1.80–1.88 GHz, 85 W, 26 V Lateral N–Channel RF Power MOSFET
|
Motorola, Inc. MOTOROLA[Motorola Inc] Freescale (Motorola)
|
MWIC930 |
MWIC930R1, MWIC930GR1 N-CDMA, W-CDMA, GSM/GSM EDGE, 746-960 MHz, 30 W, 26-28 V RF LDMOS Integrated Power Amplifiers
|
Motorola
|
MW4IC915 |
MW4IC915MBR1, MW4IC915GMBR1 GSM/GSM EDGE, N-CDMA, W-CDMA, 860-960 MHz, 15 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers
|
Motorola
|
MW5IC2030MBR1 MW5IC2030GMBR1 |
RF LDMOS Wideband Integrated Power Amplifiers 1930 MHz - 1990 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER 1930–1990 MHz, 30 W, 26 V GSM/GSM EDGE, W–CDMA, PHS RF LDMOS Wideband Integrated Power Amplifier
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] Freescale (Motorola)
|
ADP3522ACP-3-REEL ADP3522ACP-3-REEL7 ADP3522XCP-3- |
GSM Power Management System 1-CHANNEL POWER SUPPLY SUPPORT CKT, QCC32
|
Analog Devices, Inc.
|
RF5110G RF5110GPCBA-410 |
3V GSM POWER AMPLIFIER
|
RF Micro Devices
|
AWT6280RM11P8 AWT6280RM11P9 |
Quad-band GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS, Inc
|
SS8000GQTR SS8000GQTY |
GSM Power-Management System
|
Silicon Standard Corp.
|
PTF180901E PTF180901F |
GSM/EDGE RF Power FET
|
INFINEON[Infineon Technologies AG]
|
RF2138PCBA RF2138 |
3V GSM POWER AMPLIFIER 3V的的GSM功率放大
|
RF Micro Devices, Inc. RFMD[RF Micro Devices]
|
Q62702G0077 CGY0918 |
GaAs MMIC (Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package)
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|