| PART |
Description |
Maker |
| MFE960 MFE990 |
N-CHANNEL ENHANCEMENT-MODE TMOS FIELD-EFFECT TRANSISTO
|
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| PHD22NQ20T-01 PHD22NQ20T |
N-channel TrenchMOS standard level FET
N-channel TrenchMOS standard level FET 21.1 A, 200 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-channel TrenchMOS?? standard level FET
N-channel Trenchmos (tm) standard level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PHP20NQ20T PHB_PHP20NQ20T_1 PHB20NQ20T PHP20NQ20T- |
N-channel TrenchMOS? transistor
N-channel TrenchMOS TM transistor
From old datasheet system
N-channel TrenchMOS transistor
N-channel TrenchMOS(tm) transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PSMN057-200B PSMN057-200B_1 |
N-channel TrenchMOS(tm) transistor
N-channel TrenchMOS transistor
From old datasheet system
N-channel TrenchMOS TM transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| BUK7505-30A BUK7505-30A_2 |
TrenchMOS transistor Standard level FET 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
From old datasheet system
TrenchMOS TM transistor
TrenchMOS(tm) transistor Standard level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PSMN057-200P PSMN057-200P_1 |
N-channel TrenchMOS(tm) transistor
From old datasheet system
N-channel TrenchMOS transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| PSMN035-150B PSMN035-150P |
N-channel TrenchMOS transistor(N沟道 TrenchMOS晶体
N-channel TrenchMOS transistor
|
PHILIPS[Philips Semiconductors]
|
| PSMN010-55D |
N-channel logic level TrenchMOS(tm) transistor
N-channel logic level TrenchMOS TM transistor
N-channel logic level TrenchMOS transistor(N沟道逻辑电平 TrenchMOS晶体
|
Philips Semiconductors
NXP Semiconductors N.V.
|
| PHKD3NQ10T PHKD3NQ10T_1 |
Dual N-channel TrenchMOS(tm) transistor
From old datasheet system
Dual N-channel TrenchMOS transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| 2N7002T |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
