| PART |
Description |
Maker |
| MGP20N40CL |
CAP 0.1UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22
SMARTDISCRETES Internally Clamped / N-Channel IGBT
SMARTDISCRETES Internally Clamped, N-Channel IGBT
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| MGP20N14CL_D ON1860 MGP20N14CL |
SMARTDISCRETES Internally Clamped, N-Channel IGBT
From old datasheet system
20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT V ce(on) = 1.9 VOLTS 135 VOLTS (CLAMPED)
|
ONSEMI[ON Semiconductor]
|
| MGFK36V4045 |
RECTIFIER SCHOTTKY SINGLE 2A 100V 50A-Ifsm 0.79Vf 0.5A-IR SMB 3K/REEL
14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
14.0-14.5 GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| JM38510 AD532J AD532JCHIP AD532JD AD532JH AD532K A |
Internally Trimmed Integrated Circuit Multiplier
16-bit 40MSPS Low Power ADC with Selectable LVDS/CMOS Outputs 48-VQFN -40 to 85
IC-MONOLITHIC MULTIPIER
Internally Trimmed Integrated Circuit Multiplier ANALOG MULTIPLIER OR DIVIDER, 1 MHz BAND WIDTH, CDIP14
Internally Trimmed Integrated Circuit Multiplier ANALOG MULTIPLIER OR DIVIDER, 1 MHz BAND WIDTH, MBCY10
|
AD[Analog Devices]
Analog Devices, Inc.
|
| AGB3311 AGB3311S24Q1 AGB3311_REV_1.0 |
50 High Linearity Low Noise Internally Biased Wideband Gain Block
50?/a> High Linearity Low Noise Internally Biased Wideband Gain Block
50蟹 High Linearity Low Noise Internally Biased Wideband Gain Block
50з High Linearity Low Noise Internally Biased Wideband Gain Block
From old datasheet system
|
ANADIGICS[ANADIGICS, Inc]
|
| MC1436CD MC1436CP1 MC1436D MC1436P1 MC1436_D ON088 |
High Voltage / Internally Compensated Operational Amplifiers
From old datasheet system
High Voltage Internally Compensated Operational Amplifiers
High Voltage, Internally Compensated Operational Amplifiers
|
MOTOROLA[Motorola Inc]
ON Semi
Motorola, Inc
|
| STGD5NB120SZT4 STGD5NB120SZ STGD5NB120SZ-1 |
N-CHANNEL 5A -1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH IGBT
40 个字x 1 线5 x 7 点阵字符和光
N-CHANNEL 5A - 1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH IGBT N沟道5A 1200伏的DPAK /像是iPak内部钳位PowerMESHIGBT
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
STMicroelectronics N.V.
|
| MGFC42V6472 |
6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET
6.4-7.2 GHz Band 16W Internally Matched GaAs FET
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFK30V4045 K304045 |
14.0~14.5GHZ BAND 1W INTERNALLY MATCHED GAAS FET
From old datasheet system
14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFK35V4045 K354045 |
14.0-14.5GHz BAND 3W INTERNALLY MATCHED GaAs FET
From old datasheet system
14.0~14.5GHZ BAND 3W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFK37V4045 K374045 |
14.0-14.5GHz BAND 5W INTERNALLY MATCHED GaAs FET
From old datasheet system
14.0~14.5GHZ BAND 5W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC36V5964A C365964A |
5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~6.4GHZ BAND 4W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
