| PART |
Description |
Maker |
| K6R4016C1D-JC10 K6R4008V1D-TI10 K6R4008V1D-UI10 K6 |
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. 256Kx16位高速静态RAM.0V操作）。在经营商业和工业温度范围
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. 256Kx16位高速静RAM.0V操作）。在经营商业和工业温度范围
CAP,ELECTRO,1000UF,25V
DIODE,RECT,1A 400V SMD MELF
PCB Relay; Contacts:SPDT; Coil Voltage AC Max:120V; Contact Carry Current:30A; Coil Resistance:3000ohm; Mounting Type:PCB; Relay Terminals:Quick Connect; Relay Mounting:PC Board; Contact Rating:30A; Switch Function:SPDT
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 470uF; Voltage: 63V; Case Size: 12.5x20 mm; Packaging: Bulk
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM23V4100D KM23V4100DG |
4M-Bit (512Kx8 /256Kx16) CMOS Mask ROM(4M(512Kx8 /256Kx16) CMOS掩膜ROM) 4分位512Kx8 / 256Kx16）的CMOS掩模ROM分位512Kx8 / 256Kx16）的CMOS掩膜光盘
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K6T4016U3C K6T4016U3C-B K6T4016U3C-F K6T4016U3C-RB |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
Surface Mount Resistors Thick Film Chip Resistors
256Kx16 bit Low Power and Low Voltage CMOS Static RAM 256Kx16位低功耗和低电压的CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| KM684000 KIM684000L-8L KIM684000-10 KIM684000-5 KI |
512Kx8 bit CMOS static RAM, 85ns, low power
512Kx8 bit CMOS static RAM, 100ns, low power
524/ 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM
PT 16C 16#16 PIN PLUG
524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 52488字8位高速CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| KM6164002A |
256Kx16 bit Low Power CMOS Static RAM(256Kx16位低功耗CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IC62LV25616LL IC62LV25616L IC62LV25616LL-70T IC62L |
256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM
ASYNCHRONOUS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| CXK5T8512TM/TN-10LLX CXK5T8512TM/TN-12LLX CXK5T851 |
64K X 8 STANDARD SRAM, 120 ns, PDSO32
65536-word x 8-bit High Speed CMOS Static RAM
65536-word x 8-bit High Speed CMOS Static RAM
|
SONY
|
| KM23C4200D |
4M-Bit (256Kx16) CMOS Mask ROM (EPROM Type)(4M(256Kx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K6R1008C1D-TC10 K6R1004V1D-KC08 K6R1016V1D-JC10 K6 |
256K X 4 STANDARD SRAM, 10 ns, PDSO32
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位（与OE）的高速CMOS静态RAM.0V操作）
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位（与OE）的高速CMOS静RAM.0V操作）
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HM6167LP-8 HM6167P-6 HM6167P-8 |
16384-word x 1-bit high speed CMOS static RAM, 100ns
16384-word x 1-bit high speed CMOS static RAM, 85ns
|
Hitachi Semiconductor
|
| CXK591000TM/YM/M-10LL CXK591000TM/YM/M-70LL CXK591 |
131072-word x 9-bit High Speed CMOS Static RAM
131072-word x 9-bit High Speed CMOS Static RAM 131072字9位高速CMOS静态RAM
|
SONY
Vishay Intertechnology, Inc.
|
| KM684000L KM684000LG KM684000LG-L KM684000LP KM684 |
512Kx8 BIT HIGH HIGH SPEED CMOS STATIC RAM 512Kx8位高高速CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
