| PART |
Description |
Maker |
| RDN100N20 |
Switching (200V/ 10A)
Switching (200V 10A)
Switching (200V, 10A)
|
ROHM[Rohm]
|
| SCS21DSTL |
0.2A , 200V Plastic-Encapsulated Switching Diode
|
SeCoS Halbleitertechnologie GmbH
|
| FMX-32S FMN-G12S FMP-G12S |
200V,Ultra-Fast-Recovery Rectifier Diodes(200V，超快恢复整流二极管)
|
http://
SANKEN[Sanken electric]
Sanken Electric Co.,Ltd.
|
| IRFS30N20D |
200V,30A SMPS MOSFET for High frequency DC-DC converters(200V,30A开关电MOSFET用于高频DC-DC变换
|
International Rectifier
|
| OM6039SM |
200V , 9 Amp, N-Channel Power MOSFET(200V , 9A,N沟道，功率MOS场效应管) 00V安培，N沟道功率MOSFET（为200V9A条，沟道，功率马鞍山场效应管
|
HIROSE ELECTRIC Co., Ltd.
|
| TO-263AB FEP16DT-HE3 ITO-220AB |
Dual Common-Cathode Ultrafast Plastic Rectifier
Diode Switching 200V 16A 3-Pin(3 Tab) TO-220AB
|
Vishay Siliconix
Vishay Semiconductors
|
| FK10KM-10 |
CAP 1500PF 200V 1% NP0(C0G) AXIAL RAD.20 BULK S-MIL-PRF-20 STANDOFF 高速开关使
HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CDSW20-G CDSW21-G CDSW19-G |
Small Signal Switching Diodes, V-RRM=150V, V-R=150V, P-D=250mW, I-F=200mA
Small Signal Switching Diodes, V-RRM=200V, V-R=200V, P-D=250mW, I-F=200mA
Small Signal Switching Diodes, V-RRM=100V, V-R=100V, P-D=250mW, I-F=200mA
|
Comchip Technology
|
| IRFU210B IRFR210B IRFU210BTLTUFP001 IRFU210BTUFP00 |
200V N-Channel B-FET / Substitute of IRFR210 & IRFR210A
200V N-Channel MOSFET
200V N-Channel B-FET / Substitute of IRFU210 & IRFU210A
|
FAIRCHILD[Fairchild Semiconductor]
|
| FDP18N20F FDPF18N20FT |
N-Channel UniFETTM FRFETMOSFET 200V, 18A, 140m
N-Channel MOSFET 200V, 18A, 0.14楼?
N-Channel MOSFET 200V, 18A, 0.14Ω
|
Fairchild Semiconductor
|
| FQP10N20C FQPF10N20C |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
|
Fairchild Semiconductor
|
| FQI19N20C FQB19N20C FQB19N20CTM |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
