| PART |
Description |
Maker |
| PHW8ND50E PHB8ND50E PHP8ND50E |
PowerMOS transistors FREDFET, Avalanche energy rated
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PHX8ND50E |
PowerMOS transistors FREDFET, Avalanche energy rated
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PHB7N60E PHP7N60E PHW7N60E |
PowerMOS transistors Avalanche energy rated
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PHW13N40E PHB13N40E PHP13N40E |
PowerMOS transistors Avalanche energy rated
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| PHX3N40E |
PowerMOS transistors Avalanche energy rated
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PHX6N50E |
PowerMOS transistors Avalanche energy rated
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PHP6NA60E |
PowerMOS transistors Low capacitance Avalanche energy rated
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PHP6N60E PHB6N60E |
PowerMOS transistors Avalanche energy rated 5.4 A, 600 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PHD2N60E PHP2N60E PHB2N60E |
PowerMOS transistors Avalanche energy rated 1.9 A, 600 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| APT40M70JVFR |
53 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: ISOTOP®; ID (A): 53; RDS(on) (Ohms): 0.07; BVDSS (V): 400;
POWER MOS V FREDFET
|
MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
|
| BUK444-200 BUK444-200A BUK444-200B BUK444 |
PowerMOS transistor 功率金属氧化物半导体晶体
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 100uF; Voltage: 200V; Case Size: 16x20 mm; Packaging: Bulk
PowerMOS transistor
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| APT14F100B APT14F100S |
N-Channel FREDFET 1000V, 14A, 1.00Ω Max, trr ?40ns
N-Channel FREDFET 1000V, 14A, 1.00ヘ Max, trr ÷240ns
|
Microsemi Corporation
|
