| PART |
Description |
Maker |
| MTB2N60E_D ON2407 MTB2N60E MTB2N60E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 600 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTB2P50E_D ON2408 MTB2P50E MTB2P50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 500 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTP12P10 MTP12P10_D ON2547 |
From old datasheet system
TMOS POWER FET 12 AMPERES 60 VOLTS
TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.3 OHM
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| MTP2N60E_D ON2581 MTP2N60 MTP2N60E MTP2N60E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate
From old datasheet system
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
|
ON Semiconductor
Motorola, Inc
|
| MTD5N25E MTD5N25E_D ON2508 MTD5N25E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTP4N80E_D ON2614 ON2613 MTP4N80 MTP4N80E MTP4N80E |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM TMOS是功率场效应晶体.0安培800伏特的RDSon）\u003d 3.0欧姆
|
ON Semiconductor
Motorola, Inc
Motorola Mobility Holdings, Inc.
|
| MTB50N06V_D MTB50N06V ON2433 MTB50N06V-D |
TMOS V Power Field Effect Transistor D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 42 AMPERES 60 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTP4N40E MTP4N40E-D |
TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semiconductor
|
| MMDF2C03HD ON2158 MMDF2C03HD-D |
Complementary TMOS Field Effect Transistors
COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTB23P06V MTB23P06 |
TMOS POWER FET 23 AMPERES 60 VOLTS
|
MOTOROLA[Motorola, Inc]
|
| MTP75N05HD |
TMOS POWER FET 75 AMPERES RDS(on) = 9.5 mW 50 VOLTS
|
MOTOROLA INC
Motorola, Inc.
|
