| PART |
Description |
Maker |
| MRF6S21100N |
MRF6S21100NBR1 2110-2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs
|
MOTOROLA
|
| PTFA211801E PTFA211801E11 |
Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110-2170 MHz
|
Infineon Technologies AG
|
| PTFA211801E PTFA211801F |
Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
| MRF5S21130HSR3 MRF5S21130HR3 |
2170 MHz, 28 W AVG., 28 V, 2 x W–CDMA, Lateral N–Channel RF Power MOSFET
To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
|
Freescale (Motorola)
Freescale Semiconductor, Inc
飞思卡尔半导体(中国)有限公司
|
| SPH-16 |
13 MHz - 16 MHz, 180 deg - 180 deg RF/MICROWAVE PHASE SHIFTER ROHS COMPLIANT, HERMETIC SEALED, CASE A01, 8 PIN
|
Mini-Circuits
|
| BLD6G22L-50 BLD6G22LS-50 |
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
|
NXP Semiconductors
|
| PTF210451E PTF210451F PTFA210451E |
Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 ?2025 MHz and 2110 ?2170 MHz
|
Infineon Technologies AG
|
| SI-5R2.140G-T |
2110 MHz - 2170 MHz RF/MICROWAVE ISOLATOR
|
HITACHI METALS LTD
|
| AD9851BRSZ AD9851BRSZRL AD9851BRSRL |
180 MHz Complete DDS synthesizer SPECIALTY ANALOG CIRCUIT, PDSO28
CMOS 180 MHz DDS/DAC Synthesizer
|
Analog Devices, Inc.
ANALOG DEVICES INC
|
| VLB2080 |
VCO, 2080 MHz - 2170 MHz
|
TEMEX COMPONENTS
|
| SKY65120 |
2110-2170 MHz High Linearity / 2W Power Amplifier
|
Skyworks Solutions
|
| SM2122-52LD |
2110-2170 MHz 160 Watt Peak Power Amplifier
|
Stealth Microwave, Inc.
|
