| PART |
Description |
Maker |
| IRF530_D ON0283 IRF530-D IRF530/D |
100V4A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V4A TMOS功率场效应管（N沟道增强型硅门）)
TMOS POWER FET 14 AMPERES
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| PTF10020 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
125 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON POWER MODULES AB
Ericsson Microelectronics
|
| PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦，860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
| 2SK3079A |
Field Effect Transistor Silicon N Channel MOS Type 470 MHz Band Amplifier Applications
TRANSISTOR,MOSFET,N-CHANNEL,10V V(BR)DSS,3A I(D),RFMOD
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba.
TOSHIBA[Toshiba Semiconductor]
|
| MRF1518NT1_06 MRF1518NT1 MRF1518NT106 |
RF Power Field Effect Transistor
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MRF8S26120HR3 MRF8S26120HSR3 |
RF Power Field Effect Transistor
|
Motorola
|
| 27271SL |
RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
| CMT01N6010 CMT01N60XN251 CMT01N60XN92 CMT01N60GN25 |
POWER FIELD EFFECT TRANSISTOR
|
Champion Microelectronic Corp.
Champion Microelectroni...
|
| MAPL-000817-015CPC |
RF Power Field Effect Transistor
|
Tyco Electronics
|
| MTP6N10 |
POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| MTP15N05E |
Power Field Effect Transistor
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
|
