PART |
Description |
Maker |
154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五(巴西)总裁| 7.5AI(丙
|
NXP Semiconductors N.V. Bel Fuse, Inc. YEONHO Electronics Co., Ltd.
|
2SC5346 2SC5346S |
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | SC-71VAR 50 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)
|
Panasonic, Corp. Matsshita / Panasonic Panasonic Semiconductor
|
UPA801TF UPA801TF-T1 |
BJT NPN SILICON HIGH FREQUENCY TRANSISTOR
|
NEC Corp.
|
UPA809TF UPA809TF-T1 |
NPN SILICON HIGH FREQUENCY TRANSISTOR NPN硅高频晶体管 BJT 双极型晶体管
|
NEC, Corp. NEC[NEC]
|
164-22 163-28 163-12 164-12 164-26 164-20 164-30 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 160V五(巴西)总裁|甲一c)| STR-5/16 晶体管|晶体管| npn型| 120伏特五(巴西)总裁|甲一c)| STR-5/16 TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 40V的五(巴西)总裁|甲一(c)| STR-5/16 TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管| npn型| 280伏特五(巴西)总裁|甲一(c)| STR-5/16
|
Ecliptek, Corp.
|
2SC5378 2SC5378R |
TRANSISTOR | BJT | NPN | 8V V(BR)CEO | 80MA I(C) | SOT-323 Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation)
|
Panasonic Corporation PANASONIC[Panasonic Semiconductor]
|
2SC2229Y BF594 2SC1815GR 2SC1815O BF596 |
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 30MA I(C) | TO-92VAR TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | TO-92 TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-92 晶体管|晶体管| npn型| 150伏五(巴西)总裁| 50mA的一c)|2 TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 25MA I(C) | TO-92 晶体管|晶体管|叩| 30V的五(巴西)总裁| 25mA电流一(c)|2
|
Lumex, Inc. Atmel, Corp.
|
2SC2999E 2SC2999D SC2999 |
NPN Epitaxial Planar Silicon Transistor(HF Amp Applications) TRANSISTOR,BJT,NPN,20V V(BR)CEO,30MA I(C),SPAK UHF/Microwave NPN BJT From old datasheet system SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
|
SANYO[Sanyo Semicon Device] Sanyo Semiconductor Corp
|
2SD2402 2SD2402EX 2SD2402EZ 2SD2402EY |
NPN epitaxial type silicon transistor TRANSISTOR,BJT,NPN,30V V(BR)CEO,5A I(C),TO-243 TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 5A I(C) | TO-243 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 2SD2402数据表|数据表[04/2002]
|
nec Dialight PLC
|
2SC829 2SC829B 2SC829C |
Silicon NPN epitaxial planer type(For high-frequency amplification) TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-92 Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
|
http:// PANASONIC[Panasonic Semiconductor] Panasonic Corporation
|
2N3735CSM4 |
Medium Current NPN Silicon Annular TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1A I(C) | LLCC
|
Seme LAB
|
BUD42D-D BUD42D-1 |
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 4A I(C) | TO-251AA High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability
|
ON Semiconductor
|