| PART |
Description |
Maker |
| IS64WV3216BLL IS64WV3216BLL-15BA3 IS64WV3216BLL-15 |
32K x 16 HIGH-SPEED CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| IS61C256AL-10J IS61C256AL-10T IS61C256AL-10TL IS61 |
32K X 8 HIGH-SPEED CMOS STATIC RAM
|
Integrated Silicon Solution, Inc.
|
| IS61WV3216DALL/DALS IS61WV3216DBLL/DBLS IS64WV3216 |
32K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| GLT7256L08-10J3 GLT7256L08-10TS GLT7256L08-12J3 GL |
10ns; Ultra high performance 3.3V 32K x 8 CMOS static RAM
12ns; Ultra high performance 3.3V 32K x 8 CMOS static RAM
15ns; Ultra high performance 3.3V 32K x 8 CMOS static RAM
8ns; Ultra high performance 3.3V 32K x 8 CMOS static RAM
|
G-LINK Technology
|
| CXK58256M |
32K WORD X 8 BIT HIGH SPEED CMOS STATIC RAM
|
Sony Corporation
|
| IS61WV3216BLL |
(IS61WV3216BLL / IS64WV3216BLL) 32K x 16 HIGH-SPEED CMOS STATIC RAM
|
ISSI
|
| CXK58256 CXK58256M-10 CXK58256M-10L CXK58256M-12 C |
32K WORD X 8 BIT HIGH SPEED CMOS STATIC RAM 32K的字× 8位高速CMOS静态RAM
|
Sony, Corp.
Sony Corporation
|
| AT27LV256A AT27LV256A-12 AT27LV256A-12JC AT27LV256 |
High Speed CMOS Logic 14-Stage Binary Counter with Oscillator 16-SOIC -55 to 125 32K X 8 OTPROM, 70 ns, PQCC32
256K 32K x 8 Low Voltage OTP CMOS EPROM 32K X 8 OTPROM, 90 ns, PDSO28
High Speed CMOS Logic 14-Stage Binary Counter with Oscillator 16-TSSOP -55 to 125 32K X 8 OTPROM, 90 ns, PDSO28
High Speed CMOS Logic 14-Stage Binary Counter with Oscillator 16-SOIC -55 to 125 32K X 8 OTPROM, 150 ns, PDSO28
High Speed CMOS Logic CMOS Programmable Divide-by-N Counter 24-SOIC -55 to 125 32K X 8 OTPROM, 120 ns, PDSO28
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| KM68257E KM68257E-10 KM68257E-12 KM68257E-15 KM682 |
32Kx8 bit high-speed CMOS static RAM (5V operating), 15ns
32Kx8 bit high-speed CMOS static RAM (5V operating), 10ns
32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges. 32Kx8位高速CMOS静态RAMV的工作），在商业和工业温度范围操作
32Kx8 bit high-speed CMOS static RAM (5V operating), 12ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IDT7007L IDT7007L15G IDT7007L15GI IDT7007L15J IDT7 |
High-speed 32K x 8 dual-port static RAM, 55ns, low power
32K x 8 Dual-Port RAM
From old datasheet system
High-speed 32K x 8 dual-port static RAM, 15ns, low power
|
IDT[Integrated Device Technology]
|
| W24258S-70LL W24258-70LL W24258Q-55LL W24258Q-70LL |
32K X 8 CMOS STATIC RAM 32K X 8 STANDARD SRAM, 70 ns, PDSO28
32K X 8 CMOS STATIC RAM 32K X 8 STANDARD SRAM, 55 ns, PDSO28
From old datasheet system
32K ′ 8 CMOS STATIC RAM
|
Winbond Electronics, Corp.
WINBOND[Winbond]
|
