| PART |
Description |
Maker |
| 5962F9863101VXC ACS30K ACS21D ACS30KMSR-03 ACS21K |
Radiation Hardened 8-Input NAND Gate 8-INPUT NAND GATE, CDFP14
Radiation Hardened 8-Input NAND Gate 8-INPUT NAND GATE, UUC11
RES, NETWORK SMT 100R 5% 1/16W 25V, 0603X4
Quadruple Bus Buffer Gate With 3-State Outputs 14-SOIC 0 to 70
|
Intersil, Corp.
Intersil Corporation
|
| 74LS173SC 74LS133SC 74LS14PC 74LS04PC 74LS15PC 74L |
Single 13-input NAND Gate
CERAMIC CHIP/MIL-PRF-55681
Triple 3-input AND Gate
Synchronous Up/Down Counter 同步减计数器
Quad 2-input NOR Gate 输入或非
Hex D-Type Flip-Flop 六角D型触发器
Quad D-Type Flip-Flop 四D型触发器
2-To-4-Line Demultiplexer 2线复用器
Triple 3-input NAND Gate 输入与非
Quad 2-input NAND Gate 输入与非
4-Bit Buffer/Driver
|
Rochester Electronics, LLC
NXP Semiconductors N.V.
|
| 74LCX27SJ 74LCX27 74LCX27MTC 74LCX27M 74LCX27MTCX |
Triple 3-input NOR Gate LVC/LCX/Z SERIES, TRIPLE 3-INPUT NOR GATE, PDSO14
From old datasheet system
Low Voltage Triple 3-Input NOR Gate with 5V Tolerant Inputs
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| TC14L TC11L TC11L003 TC11L007 TC14L040 TC11L005 TC |
7 K usable gate, 1.0 micron, CMOS gate array
300 usable gate, 1.5 micron, CMOS gate array
700 usable gate, 1.5 micron, CMOS gate array
4 K usable gate, 1.0 micron, CMOS gate array
500 usable gate, 1.5 micron, CMOS gate array
|
Toshiba Semiconductor
|
| IN74HCT20N IN74HCT20 IN74HCT20D |
DUAL 4-INPUT NAND GATE High-Performance Silicon-Gate CMOS
|
INTEGRAL Semiconductor Devices
INTEGRAL[Integral Corp.]
|
| IN74HC86N IN74HC86 IN74HC86D |
Quad 2-Input Exclusive OR Gate High-Performance Silicon-Gate CMOS
|
INTEGRAL[Integral Corp.]
|
| MGW21N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| AP2308GEN-HF AP2308GEN-HF-14 |
Capable of 2.5V Gate Drive, Lower Gate Charge
Fast Switching Performance
|
Advanced Power Electronics Corp.
Advanced Power Electronics ...
|
| KK4023B |
Triple 3-Input NAND Gate High-Voltage Silicon-Gate CMOS
|
KODENSHI KOREA
|
| AP2344GN-HF AP2344GN-HF14 |
Capable of 1.8V Gate Drive, Lower Gate Charge
Fast Switching Performance
|
Advanced Power Electronics Corp.
|
| MGW20N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGS13002DD MGS13002D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
|
