PART |
Description |
Maker |
OH004 OH10004OH004 |
GaAs device - GaAs Hall Devices
|
Matsshita / Panasonic
|
LT140SA LT140 |
Hall Voltage 160mV Thin-Type Package GaAs Hall Device
|
Sharp Electrionic Component... SHARP[Sharp Electrionic Components] Sharp Corporation
|
OH10009 |
GaAs Hall Device
|
Panasonic Corporation PANASONIC[Panasonic Semiconductor]
|
KSY14 |
GaAs Hall Sensor with high sensitivit...
|
Infineon
|
KSY46 |
GaAs Hall Sensor with high sensitivit...
|
Infineon
|
LT202 LT202A |
GaAs Hall IC for Fan Motor 砷化镓霍IC的风扇电
|
Sharp Electrionic Compo... SHARP[Sharp Electrionic Components] Sharp, Corp.
|
LT251A |
GaAs Hall IC for Noncontact Swich(Unidirectional magnetic field-type) GaAs Hall IC for Noncontact Swich (Unidirectional magnetic field-type)
|
Sharp Corporation Sharp Electrionic Components
|
A122012 A1221 A1222 |
The A1220, A1221, A1222, and A1223 Hall-effect sensor ICs are extremely temperature-stable and stress-resistant devices especially suited for operation over extended temperature ranges to 150°C.
|
Allegro MicroSystems
|
THS126 |
HALL SENSOR GaAs ION IMPLANTED PLANAR TYPE HIGH STABILITY CONTROL DIGITAL TACHOMETER CRANK SHAFR POSITION SENSOR
|
TOSHIBA
|
THS123 |
HALL SENSOR GaAs ION IMPLANTED PLANAR TYPE HIGH STABILITY CONTROL DIGITAL TACHOMETER CRANK SHAFR POSITION SENSOR
|
TOSHIBA
|
AS179-92LF AS197-306 |
APN2015:GaAs FETs as Control Devices|DC-6 GHz Plastic Packaged and Chip|SPST AS197-306:PHEMT GaAs IC High Power SP2T and SP3T S|DC-6 GHz Plastic Packaged and Chip|SPST AS197 - 306:PHEMT的砷化镓集成电路高功率SP2T和SP3T秒|的DC - 6GHz的塑料包装和芯片|聚苯乙烯
|
Amphenol, Corp.
|