PART |
Description |
Maker |
N02L163WC2AT2 N01L163WC2AB2-55I N01L163WC2AB-55I N |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 16 bit 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K 】 16 bit
|
http:// NANOAMP[NanoAmp Solutions, Inc.]
|
N02L083WC2AT2 N02L083WC2A N02L083WC2AN N02L083WC2A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K x 8 bit
|
etc NANOAMP[NanoAmp Solutions, Inc.] Electronic Theatre Controls, Inc.
|
N02L63W2AB25I N02L63W2AT5I N02L63W2AT5IT N02L63W2A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 16 bit 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 16 bit
|
ON Semiconductor
|
N02L63W3AB25I N02L63W3AB5IT N02L63W3A |
2 Mb Ultra-Low Power Asynchronous CMOS SRAM 2 Mb, 3 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tape and Reel; Qty per Container: 2500 128K X 16 STANDARD SRAM, 70 ns, PBGA48 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 16bit
|
ON Semiconductor
|
HY62UF16201A |
Super Low Power Slow SRAM - 2Mb
|
Hynix Semiconductor
|
ISL55291 ISL55291EVAL1Z ISL55291IUZ ISL55291IUZ-T1 |
Single and Dual Ultra-Low Noise, Ultra-Low Distortion, Rail-to-Rail, Low Power Op Amp
|
http:// Intersil Corporation
|
M59DR032A M59DR032B M59DR032A120ZB1T M59DR032A100Z |
2M X 16 FLASH 1.8V PROM, 120 ns, PBGA48 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory 32兆位Mb x16插槽,双行,第低压闪 32 Mbit 2Mb x16 / Dual Bank / Page Low Voltage Flash Memory 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
|
http:// NUMONYX STMicroelectronics N.V. 意法半导 ST Microelectronics
|
IRFR3910PBF IRFR3910TR IRFR3910TRPBF IRFR3910PBF-1 |
16 A, 100 V, 0.115 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Ultra Low On-Resistance ULTRA LOW ON RESISTANCE Ultra Low On-Resistance
|
International Rectifier
|
IRFR5410TRLPBF IRFR5410TRPBF IRFR5410TRRPBF IRFR54 |
13 A, 100 V, 0.205 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA Ultra Low On-Resistance Ultra Low On-Resistance ULTRA LOW ON RESISTANCE
|
International Rectifier
|
GLT6100L08LL-100ST GLT6100L08LL-100TS GLT6100L08LL |
100ns; Ultra low power 128k x 8 CMOS SRAM 55ns; Ultra low power 128k x 8 CMOS SRAM 70ns; Ultra low power 128k x 8 CMOS SRAM 85ns; Ultra low power 128k x 8 CMOS SRAM
|
G-LINK Technology
|
3150O-SERIES 3450O-SERIES 3551TPQ0 3551TPQ1 3551TP |
Ultra-Low-Power Voltage Detectors and µP Supervisory Circuits Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset Microprocessor Supervisory Reset Circuits with Edge-Triggered, One-Shot Manual Reset Optoelectronic 光电 Ultra-Low-Power Voltage Detectors and µP Supervisory Circuits 光电 Evaluation System/Evaluation Kit for the MAX6660 光电
|
Rubycon, Corp. Fairchild Semiconductor, Corp. DB Lectro, Inc. Cypress Semiconductor Corp. RECOM Electronic GmbH
|
IS62WV51216BLL-55BLI IS62WV51216ALL-70XI IS62WV512 |
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 16 STANDARD SRAM, 45 ns, PBGA48 512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 12k × 16低电压,超低功耗的CMOS静态RAM 512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 16 STANDARD SRAM, 55 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|