PART |
Description |
Maker |
MTB3N120E_D ON2421 MTB3N120E MTB3N120E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 1200 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTB4N80E1_D ON2427 MTB4N80E1 MTB4N80E1-D |
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 800 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTD12N06EZL_D ON2462 MTD12N06EZL-D |
TMOS E-FET High Energy Power FET DPAK for Surface Mount or Insertion Mount N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 12 AMPERES 60 VOLTS
|
ON Semiconductor
|
MTP75N06HD MTP75N06HD_D ON2646 |
From old datasheet system TMOS POWER FET 75 AMPERES 50 VOLTS TMOS POWER FET 75 AMPERES RDS(on) = 10.0 mOHM 60 VOLTS
|
ON Semiconductor Motorola, Inc
|
MTP2N60E_D ON2581 MTP2N60 MTP2N60E MTP2N60E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate From old datasheet system TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
|
ON Semiconductor Motorola, Inc
|
MTD6N10 |
TMOS POWER FET 6 AMPERES RDS(on) = 0.25 OHM 80 and 100 VOLTS
|
Motorola
|
MTP71040L_D ON2639 |
TMOS POWER FET 60 AMPERES 100 VOLTS From old datasheet system
|
ON Semi
|
MTP4N80E_D ON2614 ON2613 MTP4N80 MTP4N80E MTP4N80E |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM TMOS是功率场效应晶体.0安培800伏特的RDSon)\u003d 3.0欧姆
|
ON Semiconductor Motorola, Inc Motorola Mobility Holdings, Inc.
|
MTP10N10EL ON2537 |
From old datasheet system TMOS POWER FET 10 AMPERES 100 VOLTS RDS(on) = 0.22 OHMS
|
MOTOROLA[Motorola, Inc]
|
MTW45N10E MTW45N10E_D ON2699 MTW45N10 |
From old datasheet system TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM
|
Motorola, Inc. ON Semi MOTOROLA[Motorola, Inc]
|
MTY100N10E ON2707 Y100N10E |
TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA From old datasheet system
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
|
MTE215N10E_D ON2531 MTE215N10E |
TMOS POWER FET 215 AMPERES 100 VOLTS RDS(on) = 0.0055 OHM From old datasheet system
|
Motorola, Inc ON Semi
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