| PART |
Description |
Maker |
| K7B403625M |
128Kx36-Bit Synchronous Burst SRAM
|
SAMSUNG[Samsung semiconductor]
|
| IDT71V547S100PF IDT71V547S100PFI IDT71V547S80PF ID |
From old datasheet system
128K X 36, 3.3V Synchronous SRAM with ZBT Feature, Burst Counter and Flow-Through Outputs
3.3V 128Kx36 ZBT Synchronous Flow-Through SRAM
|
IDT[Integrated Device Technology]
|
| GS81032AT-150I GS81032AT-138I GS81032AT-133I GS810 |
18ns 66MHz 32K x 32 1Mb synchronous burst SRAM
12ns 100MHz 32K x 32 1Mb synchronous burst SRAM
10ns 133MHz 32K x 32 1Mb synchronous burst SRAM
9.7ns 138MHz 32K x 32 1Mb synchronous burst SRAM
11ns 117MHz 32K x 32 1Mb synchronous burst SRAM
9ns 150MHz 32K x 32 1Mb synchronous burst SRAM
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 9.7 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 18 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 10 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM
|
GSI Technology, Inc.
|
| KM736V799 |
128Kx36 Synchronous SRAM
|
Samsung Semiconductor
|
| K7N403601A K7N401801A |
256Kx18-Bit Pipelined NtRAMData Sheet
128Kx36 & 256Kx18-Bit Pipelined NtRAMTM
128Kx36 & 256Kx18-Bit Pipelined NtRAMTM 128K × 36
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7A403600B06 |
128Kx36/x32 & 256Kx18 Synchronous SRAM
|
Samsung semiconductor
|
| K7P401822M |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM Data Sheet
|
Samsung Electronic
|
| KM732V596A |
32Kx32-Bit Synchronous Pipelined Burst SRAM
|
Samsung Semiconductor
|
| KM732V789 |
128Kx32-Bit Synchronous Pipelined Burst SRAM
|
Samsung Semiconductor
|
| KM732V787 |
128Kx32-Bit Synchronous Burst SRAM(128Kx32位同步脉静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7B201825A |
128K x 18-Bit Synchronous Burst SRAM Data Sheet
|
Samsung Electronic
|
