| PART |
Description |
Maker |
| IRFG5210 IRFG5210N IRFG5210P IRFG5210-15 |
Simple Drive Requirements
200V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY
200V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
200V Single N-Channel Hi-Rel MOSFET in a MO-036AB package
200V Single P-Channel Hi-Rel MOSFET in a MO-036AB package
|
International Rectifier
|
| FDP18N20F FDPF18N20FT |
N-Channel UniFETTM FRFETMOSFET 200V, 18A, 140m
N-Channel MOSFET 200V, 18A, 0.14楼?
N-Channel MOSFET 200V, 18A, 0.14Ω
|
Fairchild Semiconductor
|
| FQD10N20 FQU10N20 FQP10N20 FQ10N20 FQD10N20TM FQU1 |
200V N-Channel MOSFET
CAP 3900PF 50V 1% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22
200 N-Channel MOSFET
200V N-Channel QFET
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| FQT5N20 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 1A I(D) | SOT-223 晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 1A条（丁）|的SOT - 223
200V N-Channel MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRF637 IRFP256 IRFP257 IRFP242R IRF230R IRFP240R I |
TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 6.5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 23A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 21A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 20A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 500MA I(D) | TO-250VAR
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 2.5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 3.5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 4.5A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 400MA I(D) | TO-250VAR
晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 18A条（丁）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-204AA 晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 8A条（丁）|04AA
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 8A条（丁）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 5A条（丁）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 33A I(D) | TO-247 晶体管| MOSFET的| N沟道| 200伏五（巴西）直|3A条（丁）|47
TRANSISTOR | MOSFET | N-CHANNEL | 275V V(BR)DSS | 22A I(D) | TO-204AA 晶体管| MOSFET的| N沟道| 275V五（巴西）直| 22A条（丁）|04AA
|
ECM Electronics, Ltd.
Fairchild Semiconductor, Corp.
|
| IRF630S 6059 |
From old datasheet system
N - CHANNEL 200V - 0.35 -9A-D 2 PAK MESH OVERLAY TM MOSFET
N - CHANNEL 200V - 0.35ohm - 9A - D2PAK MESH OVERLAY] MOSFET
N - CHANNEL 200V - 0.35 Ohm -9A-D 2 PAK MESH OVERLAY MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| IRF9240 IRF9240-15 |
Simple Drive Requirements
TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.5ohm, Id=-11A)
HEXFET?TRANSISTORS 200V, P-CHANNEL
11 A, 200 V, 0.58 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
|
IRF[International Rectifier]
|
| IRC640 |
200V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
|
IRF[International Rectifier]
|
| FQA19N20C |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFW630 IRFW630B IRFI630 IRFI630B IRFI630BTUFP001 |
200V N-Channel B-FET / Substitute of IRFI630A
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQP10N20C FQPF10N20C |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
|
Fairchild Semiconductor
|
| IRFI9640 IRFI9640G |
Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-6.1A)
Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-6.1A)
Power MOSFET(Vdss=-200V/ Rds(on)=0.50ohm/ Id=-6.1A)
-200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
