| PART |
Description |
Maker |
| EPA480 EPA480C-SOT89 |
DC-6GHz High Efficiency Heterojunction Power FET
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
Eon Silicon Solution
|
| VSMF3710 VSMF371009 |
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| TSHG820009 |
High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
|
http://
Vishay Siliconix
|
| TSHG8400 TSHG840009 |
High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
|
http://
Vishay Siliconix
|
| TSHG541009 |
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| VSMG3700 VSMG3700-GS08 VSMG3700-GS18 VSMG370010 |
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| TSHG6200 |
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
|
VISAY[Vishay Siliconix]
|
| TSHG6200 |
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
|
Vishay Intertechnology,Inc.
|
| TSFF5210 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
VISAY[Vishay Siliconix]
|
| MGA-53543 |
MGA-53543 · 5V High Linearity LNA, 39dBm OIP3, 0.45-6GHz, SOT343(SC-70)
50 MHz to 6 GHz High Linear Amplifier
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| TSFF551008 |
High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| TSFF5410 TSFF541008 |
High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
