| PART |
Description |
Maker |
| TGS2306 |
High Power DC - 18GHz SPDT FET Switch
|
TriQuint Semiconductor
|
| TGS2306-EPU |
High Power DC - 18GHz SPDT FET Switch
|
TriQuint Semiconductor,Inc.
|
| PE6039 |
N FEMALE HIGH POWER TERMINATION FREQUENCY RANGE: DC TO 18GHz
|
Pasternack Enterprises, Inc.
|
| SW-106PIN SW-276PIN SW-106SW-276 |
High Power GaAs SPDT Switch DC - 3 GHz
SX Series Subminiature Basic Switch, Single Pole Double Throw (SPDT), 250 Vac, 3 A, Pin Plunger Actuator, Solder Termination
High Power GaAs SPDT Switch DC3 GHz
Schottky Barrier Diodes
|
Tyco Electronics
|
| R411806121 R411803121 |
ATTENUATOR, SMA 2W 6DB 18GHZATTENUATOR, SMA 2W 6DB 18GHZ; Impedance:50R; Attenuation:6dB; Connector type:SMA; Frequency, operating max:18GHz; Power rating:2W 0 MHz - 18000 MHz RF/MICROWAVE FIXED ATTENUATOR
ATTENUATOR, SMA 2W 3DB 18GHZATTENUATOR, SMA 2W 3DB 18GHZ; Impedance:50R; Attenuation:3dB; Connector type:SMA; Frequency, operating max:18GHz; Power rating:2W
|
Radiall S.A.
RADIALL S A
|
| MTB10N40E MTB10N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTB6N60E1_D MTB6N60E1 ON2447 MTB6N60 MTB6N60E1-D |
TMOS POWER FET 6.0 AMPERES 600 VOLTS 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MTD12N06EZL_D ON2462 MTD12N06EZL-D |
TMOS E-FET High Energy Power FET DPAK for Surface Mount or Insertion Mount N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 12 AMPERES 60 VOLTS
|
ON Semiconductor
|
| TPD04-06G18S |
6-18GHz 4-Way Power Divider
|
Transcom, Inc.
|
| PDW06011 |
6-18GHz 2-way Wilkinson Power Divider
|
Dielectric Laboratories...
|
