| PART |
Description |
Maker |
| MCH6001 |
2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN Epitaxial Planar Silicon Composite Transistor High Frequency Low-Noise Amplifi er
|
Sanyo Semicon Device
|
| NE429M01 NE429M01-T1 |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
NEC Corp.
|
| NE3514S02-T1C NE3514S02-T1D |
K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
Renesas Electronics Corporation
|
| NE3511S02-T1C NE3511S02-T1C-A NE3511S02-T1D NE3511 |
X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
CEL[California Eastern Labs]
|
| NE3210S01 NE3210S01-T1 NE3210S01-T1B |
Low Noise Amplifier N-Channel HJ-FET(低噪声N沟道结型场效应管) 低噪声放大器N沟道黄建忠场效应管（低噪沟道结型场效应管
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NE334S01 NE334S01-T1 NE334S01-T1B |
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET C波段超低噪声放大器N沟道黄建忠场效应
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| MGA-637P8-BLKG MGA-637P8-TR1G |
High Linearity Low Noise Amplifi er
|
AVAGO TECHNOLOGIES LIMITED
|
| MCH4014 |
High-Frequency Low-Noise Amplifi er
|
Sanyo Semicon Device
|
| LT1993IUD-2 LT1993CUD-2 |
800MHz Low Distortion, Low Noise Differential Amplifi er/ADC Driver (AV = 2V/V)
|
Linear Technology
|
| LTC6404IUD-1-PBF LTC6404IUD-1-TRPBF LTC6404IUD-2-P |
600MHz, Low Noise, High Precision Fully Differential Input/Output Amplier/Driver; Package: QFN; No of Pins: 16; Temperature Range: 0°C to 70°C OP-AMP, 2000 uV OFFSET-MAX, 500 MHz BAND WIDTH, PQCC16
600MHz, Low Noise, High Precision Fully Differential Input/Output Amplifi er/Driver
|
Linear Technology, Corp.
|
