| PART |
Description |
Maker |
| MGFC42V7785A |
7.7- 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V3742A |
3.7- 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC39V5964A_04 MGFC39V5964A MGFC39V5964A04 |
5.9 - 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V5867 MGFC42V586712 |
5.8`6.75GHz BAND 16W INTERNALLY MATCHED GaAs FET
5.8~6.75GHZ BAND 16W INTERNALLHY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V5964_04 MGFC40V5964 MGFC40V596404 |
5.9 ~ 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC44V5964_97 MGFC44V5964 MGFC44V596497 |
5.9-6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| EIA1616-8P-2 |
16.2-16.4GHz 8-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| MGFL45V1920 L45V1920 |
From old datasheet system
1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET
1.9-2.0 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFS45V2123A |
2.1 - 2.3GHz BAND 32W INTERNALLY MATCHD GaAs FET
2.1-2.3 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| FLM5359-4F |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
C-Band Internally Matched FET
|
Eudyna Devices Inc
|
| MGFS45V2325 S452325 |
2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带功率30W国内MATCHD砷化镓场效应
From old datasheet system
2.3-2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFK30V4045 K304045 |
14.0~14.5GHZ BAND 1W INTERNALLY MATCHED GAAS FET
From old datasheet system
14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
