| PART |
Description |
Maker |
| NX6410GH NX6410GH-AZ |
1 490 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
InGaAsP MQW-DFB LASER DIODE
|
California Eastern Labs
|
| ML725C8F ML701B8R ML720J8S ML720K8S ML725B8F ML725 |
InGaAsP- MQW FP laser diode
InGaAsP-MQW-FP LASER DIODES
InGaAsP - MQW - FP LASER DIODES
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| NX8303CG-CC NX8303BG-CC NX8303BG |
NECs 1310 nm InGaAsP MQW-DFB LASER DIODE
NECs 1310 nm InGaAsP MQW DFB LASER DIODE IN COAXIAL PACKAGE FOR 622 Mb/s APPLICATION
|
CEL[California Eastern Labs]
http://
|
| C-13-DFB10-TK-SLC2I-HT-01 C-13-DFB10-TK-SSC2I-HT-0 |
FIBER OPTIC DFB LASER MODULE EMITTER, 1295-1325nm, 10000Mbps, THROUGH HOLE MOUNT, TO-18, SC CONNECTOR
10Gbps 1310 nm 0 ~ 85篓卢C MQW-DFB Laser Diode Module-Differential TOSA
10Gbps 1310 nm 0 ~ 85oC MQW-DFB Laser Diode Module-Differential TOSA
|
Source Photonics, Inc.
|
| NX5317 |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
1 310nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
California Eastern Labs
|
| RLT80830MG |
Index Guided MQW Structure
|
Roithner LaserTechnik GmbH
|
| C-15-DFB2.5-RD-SSTI-V C-15-DFB C-15-DFB2.5-PD-SFCI |
1550 nm, 2.5 Gbps MQW-DFB Laser Diode Modules 1550纳米.5 Gbps的分布反馈激光器模块
1550 nm, 2.5 Gbps MQW-DFB Laser Diode Modules
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| NDL7540PA NX8561JD NX7460LE NX7460LE-BA NX7460LE-C |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE 1 480纳米掺铒光纤放大器的应用InGaAsP的应变量子阱的DC -异质结激光二极管模块
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE 掺铒光纤放大 480纳米的应用InGaAsP的应变量子阱的DC -异质结激光二极管模块
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| ML9XX17 ML9XX17SERIES |
InGaAsP MQW-DFB LASER DIODE WITH EA MODULATOR
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| ML976H10 ML9XX10 |
InGaAsP - MQW - HIGH POWER LASER DIODES
InGaAsP-MQW HIGH POWER LASER DIODES
|
Mitsubishi Electric Corporation
|
| KLT-255444 |
1550nm InGaAsP strained MQW 1.25Gbps DFB LD TO CAN
|
KODENSHI KOREA CORP.
|
