| PART |
Description |
Maker |
| GVT73512A8 73512A8S |
REVOLUTIONARY PINOUT 512K X 8
From old datasheet system
|
Galvantech
|
| GVT7264A16 7264A16S |
REVOLUTIONARY PINOUT 64K X 16
From old datasheet system
|
Galvantech
|
| PDM31096SA8TTY PDM31096SA8TTR PDM31096SA8SOTR PDM3 |
4 megabit 3.3V static RAM 512K x 8-bit revolutionary pinout
|
PARADIGM
|
| PDM31034SA10SO PDM31034SA10SOATY PDM31034SA10SOATR |
1 megabit 3.3V static RAM 128K x 8-bit revolutionary pinout
|
PARADIGM
|
| IS63LV1024-12T |
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
|
Integrated Silicon Solution, Inc
|
| AS5LC1008DJ-20_XT AS5LC1008 AS5LC1008DCJ-10_IT AS5 |
128K x 8 SRAM High-Speed CMOS SRAM with 3.3V Revolutionary Pinout
|
AUSTIN[Austin Semiconductor]
|
| IDT71028 IDT71028S12Y IDT71028S12Y8 IDT71028S12YI |
256K x 4 Static RAM Corner Pwr & Gnd Pinout
CMOS Static RAM
|
IDT
|
| MBM29LV400T MBM29LV400B |
CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16V 电源电压闪速存储器) 的CMOS 4分（12k × 8/256K × 16Falsh存储器（12k × 8/256K × 16位单5V的电源电压闪速存储器
|
Fujitsu Limited
Fujitsu, Ltd.
|
| CY7C1041V33 CY7C1041V33-15ZC CY7C1041V33-20ZC CY7C |
256K x 16 Static RAM 256K X 16 STANDARD SRAM, 17 ns, PDSO44
From old datasheet system
GIGATRUE 550 CAT6 MOLDED COMPONENT, RED 7FT
256K x 16 Static RAM 256K X 16 STANDARD SRAM, 25 ns, PDSO44
256K x 16 Static RAM 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| GS88136BGD-300I GS88132BT-200 |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 5 ns, PBGA165
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 6.5 ns, PQFP100
|
GSI Technology, Inc.
|
| M27C2001-70B6TR M27C2001-12B1 M27C2001-12N6TR M27C |
256K X 8 OTPROM, 70 ns, PDIP32
256K X 8 OTPROM, 120 ns, PDIP32
256K X 8 OTPROM, 120 ns, PDSO32
256K X 8 OTPROM, 80 ns, PDIP32
256K X 8 UVPROM, 80 ns, CDIP32
256K X 8 OTPROM, 120 ns, PQCC32
|
STMICROELECTRONICS
|
