| PART |
Description |
Maker |
| BGA427 |
Si-MMIC-Amplifier in SIEGET 25-Technologie
|
Infineon Technologies A...
|
| BGB420 BGB420E6327 |
Active Biased Transistor
Silicon MMICs - Mirror-Biased BFP 420 in SIEGET 25 Technology, Icmax = 30mA, SOT343
MMIC, LNA
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| CGY21 Q68000-A5953 |
GaAs MMIC (Two-stage monolithic microwave IC MMIC amplifier)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SSW208 |
DC-4 GHz, High Isolation GaAs MMIC SPDT Switch DC - 4型频率，高隔离的GaAs MMIC SPDT开
|
Stanford Microdevices
|
| Q68000-A6887 CGY31 |
GaAs MMIC (Two-stage monolithic microwave IC MMIC amplifier All-gold metallization Chip fully passivated)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| CGY121A Q-62702-G66 CGY121 |
GaAs MMIC (Variable gain amplifier MMIC-Amplifier for mobile communication Typical Gain Control range over 50dB)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| UPC1658G UPC1658G-E1 |
RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Low Noise, High Frequncy Si MMIC Amplifier(低噪声高频率放大
LOW NOISE/ HIGH FREQUENCY Si MMIC AMPLIFIER
LOW NOISE, HIGH FREQUENCY Si MMIC AMPLIFIER
LOW NOISE HIGH FREQUENCY Si MMIC AMPLIFIER
|
NEC Corp.
NEC[NEC]
|
| NLB-300-T3 NLB-300 NLB-300-E NLB-300-T1 |
From old datasheet system
CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz
Cascadable Broadband GaAs MMIC Amplifier DC to 10 GHz
|
RF Micro Devices, Inc.
RFMD[RF Micro Devices]
|
| RMPA2451 RMPA2451-TB |
2.42.5 GHz GaAs MMIC Power Amplifier
2.4-2.5 GHz GaAs MMIC Power Amplifier
ISM Band PA (Partially Matched)
|
Fairchild Semiconductor Corporation
|
| NBB-312 NBB-312-E NBB-312-T1 NBB-X-K1 |
CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz 0 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Cascadable Broadband GaAs MMIC Amplifier DC to 12 GHz
|
http://
RF Micro Devices, Inc.
RFMD[RF Micro Devices]
|
