PART |
Description |
Maker |
0234002.MXP 0234003.MXE- 0234003.MXEP 023406.3MXP |
234 Series, 5 x 20 mm, Medium-Acting Fuse MEDIUM BLOW ELECTRIC FUSE, 1.25A, 250VAC, 100A (IR), INLINE/HOLDER
|
Littelfuse
|
SBM82314X SBM82314 SBM82314Z SBM81314G SBM81314N S |
Medium Power BIDI Optical Standard Module 1550 nm Emitting, 1310 nm Receiving From old datasheet system Transceiver Medium Power BIDI Optical Standard Module 1550 nm Emitting/ 1310 nm Receiving Components and FTTx solutions - Tx 1550nm/Rx 1310nm, Medium Power
|
INFINEON[Infineon Technologies AG]
|
SF25JZ51 SF25GZ51 F25JZ51 |
SF25JZ51 THYRISTOR SILICON PLANAR TYPE MEDIUM POWER CONTROL APPLICATIONS MEDIUM POWER CONTROL APPLICATIONS 中功率控制中的应
|
TOSHIBA[Toshiba Semiconductor]
|
FZT689 FZT689B |
SOT223 NPN SILICON PLANAR MEDIUM NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
|
Diodes Incorporated ZETEX[Zetex Semiconductors]
|
MADS-001339-1279OT MA4E1339 MA4E1339A1-1141TSOT-23 |
SILICON, MEDIUM BARRIER SCHOTTKY, C BAND, MIXER DIODE Silicon Medium Barrier Schottky Diodes`
|
MACOM[Tyco Electronics]
|
CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772 Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
TRA2525 MR3025 TRA2525-D |
Medium - Current Silicon Rectifier Medium-Current Silicon Rectifiers
|
ONSEMI[ON Semiconductor]
|
CR12CM-12A CR12CM-12A-A8 CR12CM-12A-13 CR12CM-12A- |
Thyristor Medium Power Use 600V - 12A - Thyristor Medium Power Use
|
Renesas Electronics Corporation
|