| PART |
Description |
Maker |
| 2SC287807 2SC2878 |
Silicon NPN Epitaxial Type For Muting and Switching Applications
|
Toshiba Semiconductor
|
| 2SA195507 2SA1955 |
General Purpose Amplifier Applications Switching and Muting Switch Application
|
Toshiba Semiconductor
|
| 2SC2878 |
Transistor Silicon NPN Epitaxial Type For Muting and Switching Applications
|
TOSHIBA
|
| RN144107 RN1443 RN1442 RN1444 RN1441 |
Silicon NPN Epitaxial Type (PCT Process) Muting And Switching Applications
|
Toshiba Semiconductor
|
| HN1C03F |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting And Switching Applications
|
TOSHIBA
|
| 2SA1955 |
Transistor Silicon PNP Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application
|
TOSHIBA
|
| 2SC5233 |
Transistor Silicon NPN Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application
|
TOSHIBA
|
| 2SC5376F |
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS FOR MUTING AND SWITCHING APPLICATIONS
|
Toshiba Semiconductor
|
| 2SC5376F |
Transistor Silicon NPN Epitaxial Type Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications
|
TOSHIBA
|
| 2SC5376FV 2SC5376FV-A |
Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications
|
Toshiba Semiconductor
|
| KRC281M KRC286M KRC282M KRC283M KRC284M KRC285M |
CAP, TANT, 100UF, 10%, 16V, E
Built in Bias Resistor
EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)
(KRC281M - KRC286M) EPITAXIAL PLANAR NPN TRANSISTOR
|
KEC Holdings
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KRC682T KRC686T KRC681T KRC683T KRC684T KRC685T |
EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING) 外延平面NPN晶体管（切换，音频静音）
(KRC681T - KRC686T) EPITAXIAL PLANAR NPN TRANSISTOR
Built in Bias Resistor
|
KEC Holdings
KEC[KEC(Korea Electronics)]
Korea Electronics (KEC)
|
