| PART |
Description |
Maker |
| 27C256 |
256K CMOS UV Erasable PROM (32K X 8)
|
General Semiconductor Inc
|
| 24AA256-I_ |
Inc. 24AA256/24LC256/
24FC256 (24XX256*) is a 32K x 8 (256 Kbit) Serial
Electrically Erasable PROM
|
MICROCHIP
|
| IS25C64A |
(IS25C32A / IS25C64A) 32K-BIT/64K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
|
ISSI
|
| CY7C277 7C277 |
32K x 8 Reprogrammable Registered PROM(32K x 16可重复编程的寄存式PROM) 32K的8可再编程注册胎膜早破2K的16可重复编程的寄存式可编程
From old datasheet system
|
Cypress Semiconductor Corp.
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| M2716 M2716M |
16K (2K x 8) UV ERASABLE PROM
|
STMicroelectronics
INTEL[Intel Corporation]
|
| XLS2864A |
8K x 8 Electrically Erasable PROM
|
Exel Microelectronics
|
| X2402 X2402PI X2402I |
ELECTRICALLY ERASABLE PROM
|
XICOR[Xicor Inc.]
|
| M27128A-20 M27128A-30 M27128A |
Advanced 128K(16 x 8) UV Erasable PROM
|
INTEL[Intel Corporation]
|
| BR24L16FVM-W BR24L16F-W BR24L16FV-W BR24L16FJ-W BR |
2k×8 bit electrically erasable PROM
|
Rohm
|
