| PART |
Description |
Maker |
| MMDJ3N03BJ MMDJ3N03BJT |
DUAL BIPOLAR POWER TRANSISTOR NPN SILICON 30 VOLTS 3 AMPERES 3 A, 30 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR, SO-8
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| HC05 MC68HC705X32 |
Bipolar Transistor; Transistor Polarity:Dual P Channel; Power Dissipation:20W; DC Current Gain Min (hfe):25; Collector Current:1A; DC Current Gain Max (hfe):200; Power (Ptot):20W
HCMOS microcontroller unit
|
Motorola, Inc.
|
| 2SJ621 2SJ621-T2B 2SJ621-T1B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC Corp.
NEC[NEC]
|
| PHI920-33 PH1920-33 |
Low Power Zero-Drift Operational Amplifier with Internal Capacitors; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C
Wireless Bipolar Power Transistor, 33W 1930 - 1990 MHz
Wireless Bipolar Power Transistor/ 33W 1930 - 1990 MHz
|
Tyco Electronics
|
| BFS480 |
RF-Bipolar - NPN Silicon RF dual transistor array (2xBFR180W) for low noise, low power amplifiers
NPN Silicon RF Transistor NPN硅射频晶体管
|
Infineon Technologies AG
|
| 2SC1741AS 2SD1484 2SD1484K A5800323 2SC3359S 2SC33 |
50V,0.5A medium power transistor
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Medium Power Transistor (50V, 0.5A)
From old datasheet system
Medium Power Transistor (50V/ 0.5A)
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 300MA I(C) | SPAK
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 500MA I(C) | SPAK
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 50V五（巴西）总裁| 500mA的一（c）| SPAK
|
Rohm
|
| SUT161G |
Dual NPN Bipolar transistor
|
KODENSHI KOREA CORP.
|
| SUT121G |
Dual NPN Bipolar transistor
|
KODENSHI KOREA CORP.
|
| PHI516160 PH1516-60 |
Wireless Bipolar Power Transistor, 60W 1450 - 1550 MHz
L BAND, Si, NPN, RF POWER TRANSISTOR
Wireless Bipolar Power Transistor/ 60W 1450 - 1550 MHz
|
Tyco Electronics
|
| MJL16218 ON2054 MJL16218-D |
SCANSWITCH™
15 AMPERES POWER TRANSISTOR
From old datasheet system
POWER TRANSISTOR 15 AMPERES 1500 VOLTS - VCES 170 WATTS
SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors
|
ON Semiconductor
Motorola, Inc
|
| MMJT9435T1 MMJT9435T1G MMJT9435T3 MMJT9435T3G MMJT |
PNP Bipolar Power Transistor
Bipolar Power Transistors PNP Silicon
|
ONSEMI[ON Semiconductor]
|
